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HI hydrolysis-derived intermediate as booster for CsPbI3 perovskite: from crystal structure, film fabrication to device performance

Zhizai Li and Zhiwen Jin

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 Corresponding author: Zhiwen Jin, jinzw@lzu.edu.cn

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Abstract: Nowadays, inorganic CsPbI3 perovskite solar cells (PSCs) have become one of the most attractive research hotspots in photovoltaic field for its superior chemical stability and excellent photo-electronic properties. Since the first independent report in 2015, the power conversion efficiency (PCE) of CsPbI3 based PSCs has sharply increased from 3.9% to 19.03%. Importantly, during the developing process of CsPbI3 PSCs, HI hydrolysis-derived intermediate plays an important role: from stabilizing the crystal structure, optimizing the fabricated film to boosting the device performance. In this review, the different crystal and electronic structures of CsPbI3 are introduced. We then trace the history and disputes of HI hydrolysis-derived intermediate to make this review more logical. Meanwhile, we highlight the functions of HI hydrolysis-derived intermediate, and systematically summarize the advanced works on CsPbI3 PSCs. Finally, the bottlenecks and prospects are revealed to further increase the CsPbI3 PSCs performance.

Key words: CsPbI3HIintermediatecrystal structurestability



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Fig. 1.  (Color online) (a) The structure and transition of CsPbI3 phases versus temperature. Reproduced with permission[46]. Copyright 2018, American Chemical Society Publications. (b) The transition of CsPbI3 thermal phase and their transition mechanism. Reproduced with permission[35]. Copyright 2019, Science Publishing Group. (c) Schematic of bonding/antibonding orbitals in CsPbX3. Reproduce with permission[54]. Copyright 2016, American Chemical Society Publications. (d) Electronic band structure of CsPbI3 calculated by DFT and (e) tight-binding model. Reproduced with permission[46]. Copyright 2018, American Chemical Society Publications.

Fig. 2.  (Color online) (a) The diagrammatic of HI fabricated CsPbI3. Reproduced with permission[42]. Copyright 2015, The Royal Society of Chemistry. (b) Schematic of using HPbI3 to fabricate FAPbI3 PSCs. Reproduced with permission[65]. Copyright 2015, Wiley-VCH Publications. (c) Detail information of PbI2 and HPbI3 fabricated perovskite film. Reproduced with permission[69]. Copyright 2018, Wiley-VCH Publications. (d) The molecular structure of FA and DMA, and the tolerance factor of corresponding perovskite (CsPbI3, Cs0.7DMA0.3PbI3 and DMAPbI3). Reproduced with permission[71]. Copyright 2018, Nature Publishing Group.

Fig. 3.  (Color online) (a) Schematic illustration the fabrication process of CsxDMA1–xPbI3. Reproduced with permission[72]. Copyright 2019, Elsevier Inc Publications. (b) Schematic diagram of using DMAI additive to form CsPbI3 films. Reproduced with permission[74]. Copyright 2019, Wiley-VCH Publications. (c) The changeable component of DMAI-fabricated perovskite versus annealing temperature. Reproduced with permission[75]. Copyright 2020, American Chemical Society Publications. (d) Schematic diagram of DMAPbI3 synthesis process and the information of corresponding perovskite. Reproduced with permission[76]. Copyright 2019, Wiley-VCH Publications.

Fig. 4.  (Color online) (a) The detail information of PbI2.HI and PbI2 fabricated perovskite, inserted pictures are their digital photos. Reproduced with permission[78]. Copyright 2017, Wiley-VCH Publications. (b) The diagram of PbI2 and HPbI3 fabricated CsPbI3 film, respectively. Reproduced with permission[68]. Copyright 2018, American Chemical Society Publications. (c) Schematic of PEA+ organic ligand treatment on CsPbI3 thin film. Reproduced with permission[79]. Copyright 2018, Elsevier Inc Publications. (d) Diagram illustrates the mechanism of with/without OTG passivation. Reproduced with permission[80]. Copyright 2019, Wiley-VCH Publications.

Fig. 5.  (Color online) (a) Schematic illustration of CHI crack-filling interface engineering. Reproduced with permission[73]. Copyright 2019, Science Publishing Group. (b) Schematic diagram CsPbI3 crystal formation by using HI and H2O. Reproduced with permission[83]. Copyright 2018, American Chemical Society Publications. (c) Mechanism of STCG-CsPbI3 film formation by assistant of ADMA molecule. Reproduced with permission[84]. Copyright 2020, Wiley-VCH Publications. (d) The schematic illustration of HI and PEAI do on the CsPbI3. Reproduced with permission[43]. Copyright 2018, Nature Publishing Group.

Fig. 6.  (Color online) (a) The structure and decomposition energies of different n values PEA2Csn-1PbnX3n+1. Reproduced with permission[97]. Copyright 2018, Elsevier Inc Publications. (b) The controllable n values and structures of PEA2Csn-1PbnX3n+1. Reproduced with permission[98]. Copyright 2019, Wiley-VCH Publications. (c) Schematic illustration the fabrication process of shell ligand, HPbI3, H2PbI4 and in-suit assembled of them. Reproduced with permission[101]. Copyright 2019, Wiley-VCH Publications.

Table 1.   Photovoltaic parameters of CsPbI3 PSCs fabricated by HI hydrolysis-derived intermediate.

MaterialConfigurationJSC (mA/cm2)VOC (V)FF (%)PCE (%)sPCE (%)Ref.
α-phase CsPbI3ITO/PEDOT:PSS/CsPbI3/PCBM/BCP/LiF/Al8.170.87069.04.88[62]
ITO/PEDOT:PSS/CsPbI3/PCBM/BCP/LiF/Al5.890.96064.03.66[63]
FTO/TiO2/CsPbI3·xEDAPbI4/Spiro/Ag14.531.15071.011.86[78]
FTO/TiO2/CsPbI3/Carbon18.500.79065.09.50[68]
ITO/SnO2/LiF/CsPbI3-xBrx/Spiro/Au18.301.23482.618.64[70]
FTO/TiO2/CsPbI3-x-DETAI3/P3HT/Au12.211.06061.07.89[67]
FTO/PTAA/OTG3-CsPbI3/PCBM/BCP/Ag15.811.12075.213.3213.20[80]
FTO/TiO2/PEAI-CsPbI3/Spiro/Ag18.401.11069.614.3013.50[79]
Metastable (β- and γ-) phase CsPbI3FTO/TiO2/CsPbI3/PTAA/Au18.951.05974.915.07[43]
FTO/NiOx/STCG-CsPbI3/ZnO/ITO18.291.09080.516.04[84]
FTO/TiO2/CsPbI3/PTAA/Au19.751.13576.617.1716.83[86]
N-CQDs EDS/FTO/TiO2/CsPbI3/PTAA/Au19.151.10675.616.0215.90[89]
FTO/TiO2/CsPbI3/PTAA/Au18.311.11078.015.91[85]
FTO/TiO2/CsPbI3/PTAA/Au20.341.09077.017.03[88]
FTO/TiO2/CsPbI3/PTAA/Au21.151.09077.017.3016.78[76]
FTO/TiO2/CsPbI3/P3HT/Au16.531.04065.711.309.70[83]
FTO/TiO2/CsPbI3/PTAA/Au19.581.08475.716.0715.4787]
FTO/TiO2/CsPbI3/UCNP-PTAA/Au19.171.11374.315.8615.59[90]
FTO/TiO2/CsPbI3/PTAA/Au20.301.08075.516.24[91]
Low dimension CsPbI3FTO/TiO2/CsPbI3/PTAA/Au19.510.99370.513.6513.29[98]
ITO/PTAA/CsPbI3/C60/BCP/Cu17.211.09067.512.65[101]
ITO/SnO2/CsPbI3/Spiro/Au16.591.07070.012.40[97]
FTO/TiO2/CsPbI3/Carbon15.760.91066.09.39[99]
DMAxCs1xPbI3FTO/TiO2/DMA0.15Cs0.85PbI3/Spiro/Ag19.401.05075.015.30[75]
FTO/TiO2/DMAI-CsPbI3/Spiro/Ag20.231.13782.719.03[74]
FTO/TiO2/Cs0.5DMA0.5PbI3/Spiro/Ag18.401.05474.014.30[72]
ITO/PEDOT:PSS/Cs0.7DMA0.3PbI3/C60/BCP/Ag16.650.99076.512.62[71]
FTO/TiO2/DMAI-CsPbI3/Spiro/Ag20.231.11082.018.40[73]
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    Received: 04 February 2020 Revised: 23 February 2020 Online: Accepted Manuscript: 31 March 2020Uncorrected proof: 02 April 2020Published: 13 May 2020

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      Zhizai Li, Zhiwen Jin. HI hydrolysis-derived intermediate as booster for CsPbI3 perovskite: from crystal structure, film fabrication to device performance[J]. Journal of Semiconductors, 2020, 41(5): 051202. doi: 10.1088/1674-4926/41/5/051202 Z Z Li, Z W Jin, HI hydrolysis-derived intermediate as booster for CsPbI3 perovskite: from crystal structure, film fabrication to device performance[J]. J. Semicond., 2020, 41(5): 051202. doi: 10.1088/1674-4926/41/5/051202.Export: BibTex EndNote
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      Zhizai Li, Zhiwen Jin. HI hydrolysis-derived intermediate as booster for CsPbI3 perovskite: from crystal structure, film fabrication to device performance[J]. Journal of Semiconductors, 2020, 41(5): 051202. doi: 10.1088/1674-4926/41/5/051202

      Z Z Li, Z W Jin, HI hydrolysis-derived intermediate as booster for CsPbI3 perovskite: from crystal structure, film fabrication to device performance[J]. J. Semicond., 2020, 41(5): 051202. doi: 10.1088/1674-4926/41/5/051202.
      Export: BibTex EndNote

      HI hydrolysis-derived intermediate as booster for CsPbI3 perovskite: from crystal structure, film fabrication to device performance

      doi: 10.1088/1674-4926/41/5/051202
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      • Author Bio:

        Zhizai Li Zhizai Li received his BSc degree in the School of Physical Science and Technology, Lanzhou University. He is currently a PhD student under the supervision of Prof. Zhiwen Jin. His main research focuses on inorganic semiconductor materials and solar cells

        Zhiwen Jin Zhiwen Jin is a professor with the School of Physical Science and Technology, Lanzhou University. He received a BSc degree from Lanzhou University in 2011 and a PhD from Institute of Chemistry, Chinese Academy of Sciences in 2016. From 2016 to 2018,he was a post-doctoral fellow with Shaanxi Normal University. He joined Lanzhou University in 2018 as a professor. His research interests include inorganic semiconductor materials, thin-film photoelectric devices and device physics

      • Corresponding author: jinzw@lzu.edu.cn
      • Received Date: 2020-02-04
      • Revised Date: 2020-02-23
      • Published Date: 2020-05-01

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