Citation: |
Ning Wang. Ohmic contacts for atomically-thin transition metal dichalcogenide semiconductors[J]. Journal of Semiconductors, 2020, 41(7): 070401. doi: 10.1088/1674-4926/41/7/070401
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N Wang, Ohmic contacts for atomically-thin transition metal dichalcogenide semiconductors[J]. J. Semicond., 2020, 41(7): 070401. doi: 10.1088/1674-4926/41/7/070401.
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Ohmic contacts for atomically-thin transition metal dichalcogenide semiconductors
DOI: 10.1088/1674-4926/41/7/070401
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References
[1] Tung R T. Chemical bonding and Fermi level pinning at metal–semiconductor interfaces. Phys Rev Lett, 2020, 84, 6078 doi: 10.1103/PhysRevLett.84.6078[2] Cui X, Lee G H, Kim Y D, et al. Multi-terminal transport measurements of MoS2 using a van der Waals heterostructure device platform. Nat Nanotechnol, 2015, 10, 534 doi: 10.1038/nnano.2015.70[3] Liu Y, Guo J, Zhu E, et al. Approaching the Schottky–Mott limit in van der Waals metal–semiconductor junctions. Nature, 2018, 557, 696 doi: 10.1038/s41586-018-0129-8[4] Allain A, Kang J, Banerjee K. Electrical contacts to two-dimensional semiconductors. Nat Mater, 2015, 14, 1195 doi: 10.1038/nmat4452[5] Kappera R, Voiry D, Yalcin S E, et al. Phase-engineered low-resistance contacts for ultrathin MoS2 transistors. Nat Mater, 2014, 13, 1128 doi: 10.1038/nmat4080[6] Xu S G, Wu Z F, Lu H H, et al. Universal low-temperature Ohmic contacts for quantum transport in transition metal dichalcogenides. 2D Mater, 2016, 3, 021007 doi: 10.1088/2053-1583/3/2/021007[7] Wu Z F, Xu S G, Lu H H, et al. Even–odd layer-dependent magnetotransport of high-mobility Q-valley electrons in transition metal disulfides. Nat Commun, 2016, 7, 12955 doi: 10.1038/ncomms12955[8] Xu S G, Shen J Y, Long G, et al. Odd-integer quantum Hall states and giant spin susceptibility in p-type few-layer WSe2. Phys Rev Lett, 2017, 118, 067702 doi: 10.1103/PhysRevLett.118.067702[9] Wu Z F, Zhou B T, Cai X B, et al. Intrinsic valley Hall transport in atomically thin MoS2. Nat Commun, 2019, 10, 611 doi: 10.1038/s41467-019-08629-9[10] Cai X B, Wang N, et al. unpublished work (under reviewing 2020) carried out at the Hong Kong University of Science and Technology -
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