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Anisotropic 2D materials for post-Moore photoelectric devices

Dingdong Xie1, Jie Jiang1, and Liming Ding2,

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 Corresponding author: Jie Jiang, jiangjie@csu.edu.cn; Liming Ding, ding@nanoctr.cn

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[1]
Novoselov K S, Geim A K, Morozov S V, et al. Electric field effect in atomically thin carbon films. Science, 2004, 306, 666 doi: 10.1126/science.1102896
[2]
Conti S, Pimpolari L, Calabrese G, et al. Low-voltage 2D materials-based printed field-effect transistors for integrated digital and analog electronics on paper. Nat Commun, 2020, 11, 3566 doi: 10.1038/s41467-020-17297-z
[3]
Dieny B, Prejbeanu I L, Garello K, et al. Opportunities and challenges for spintronics in the microelectronic industry. Nat Electron, 2020, 3, 446 doi: 10.1038/s41928-020-0461-5
[4]
Pi L, Hu C, Shen W, et al. Highly in-plane anisotropic 2D PdSe2 for polarized photodetection with orientation selectivity. Adv Funct Mater, 2021, 31, 2006774 doi: 10.1002/adfm.202006774
[5]
Li G, Yin S, Tan C, et al. Fast Photothermoelectric response in CVD-grown PdSe2 photodetectors with in-plane anisotropy. Adv Funct Mater, 2021, 31, 2104787 doi: 10.1002/adfm.202104787
[6]
Tian H, Guo Q, Xie Y, et al. Anisotropic black phosphorus synaptic device for neuromorphic applications. Adv Mater, 2016, 28, 4991 doi: 10.1002/adma.201600166
[7]
Du X, Tao L, Xu J, et al. Two-dimensional multibit optoelectronic memory with broadband spectrum distinction. Nat Commun, 2018, 9, 2966 doi: 10.1038/s41467-018-05397-w
[8]
Xiang D, Liu T, Wang J, et al. Anomalous broadband spectrum photodetection in 2D rhenium disulfide transistor. Adv Opt Mater, 2019, 7, 1901115 doi: 10.1002/adom.201901115
[9]
Qin J, Zhou F, Wang J, et al. Anisotropic signal processing with trigonal selenium nanosheet synaptic transistors. ACS Nano, 2020, 14, 10018 doi: 10.1021/acsnano.0c03124
[10]
Cao Y, Fatemi V, Demir A, et al. Correlated insulator behaviour at half-filling in magic angle graphene superlattices. Nature, 2018, 556, 80 doi: 10.1038/nature26154
[11]
Park J M, Cao Y, Watanabe K, et al. Tunable strongly coupled superconductivity in magic-angle twisted trilayer graphene. Nature, 2021, 590, 249 doi: 10.1038/s41586-021-03192-0
[12]
Cao Y, Rodan-Legrain D, Park J M, et al. Nematicity and competing orders in superconducting magic-angle graphene. Science, 2021, 372, 264 doi: 10.1126/science.abc2836
Fig. 1.  (Color online) (a) Multilayer black phosphorus. (b) Schematic diagram of the polarization-sensitive photodetector based on anisotropic 2D materials. (c) Normalized photocurrents in the polar coordinates. Reproduced with permission[4], Copyright 2020, John Wiley and Sons. (d) Three-terminal EGT to mimic the synapse behavior. Reproduced with permission[9], Copyright 2020, American Chemical Society. (e) The EGT device with a pair of opposite electrodes. Reproduced with permission[9], Copyright 2020, American Chemical Society. (f) Biological axon-multi-synapse system. (g) Top: the Moiré pattern in TBG. Bottom: three different stacking in TBG. (h) A simplified model for the stacking order in TBG. (i) Density of states. Left: a spin-singlet Mott-like insulator ground state. Right: the excitations can be polarized and charge conduction occurs when the Zeeman energy exceeds the charge gap.

[1]
Novoselov K S, Geim A K, Morozov S V, et al. Electric field effect in atomically thin carbon films. Science, 2004, 306, 666 doi: 10.1126/science.1102896
[2]
Conti S, Pimpolari L, Calabrese G, et al. Low-voltage 2D materials-based printed field-effect transistors for integrated digital and analog electronics on paper. Nat Commun, 2020, 11, 3566 doi: 10.1038/s41467-020-17297-z
[3]
Dieny B, Prejbeanu I L, Garello K, et al. Opportunities and challenges for spintronics in the microelectronic industry. Nat Electron, 2020, 3, 446 doi: 10.1038/s41928-020-0461-5
[4]
Pi L, Hu C, Shen W, et al. Highly in-plane anisotropic 2D PdSe2 for polarized photodetection with orientation selectivity. Adv Funct Mater, 2021, 31, 2006774 doi: 10.1002/adfm.202006774
[5]
Li G, Yin S, Tan C, et al. Fast Photothermoelectric response in CVD-grown PdSe2 photodetectors with in-plane anisotropy. Adv Funct Mater, 2021, 31, 2104787 doi: 10.1002/adfm.202104787
[6]
Tian H, Guo Q, Xie Y, et al. Anisotropic black phosphorus synaptic device for neuromorphic applications. Adv Mater, 2016, 28, 4991 doi: 10.1002/adma.201600166
[7]
Du X, Tao L, Xu J, et al. Two-dimensional multibit optoelectronic memory with broadband spectrum distinction. Nat Commun, 2018, 9, 2966 doi: 10.1038/s41467-018-05397-w
[8]
Xiang D, Liu T, Wang J, et al. Anomalous broadband spectrum photodetection in 2D rhenium disulfide transistor. Adv Opt Mater, 2019, 7, 1901115 doi: 10.1002/adom.201901115
[9]
Qin J, Zhou F, Wang J, et al. Anisotropic signal processing with trigonal selenium nanosheet synaptic transistors. ACS Nano, 2020, 14, 10018 doi: 10.1021/acsnano.0c03124
[10]
Cao Y, Fatemi V, Demir A, et al. Correlated insulator behaviour at half-filling in magic angle graphene superlattices. Nature, 2018, 556, 80 doi: 10.1038/nature26154
[11]
Park J M, Cao Y, Watanabe K, et al. Tunable strongly coupled superconductivity in magic-angle twisted trilayer graphene. Nature, 2021, 590, 249 doi: 10.1038/s41586-021-03192-0
[12]
Cao Y, Rodan-Legrain D, Park J M, et al. Nematicity and competing orders in superconducting magic-angle graphene. Science, 2021, 372, 264 doi: 10.1126/science.abc2836
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    Received: 05 September 2021 Revised: Online: Accepted Manuscript: 06 September 2021Uncorrected proof: 07 September 2021Published: 04 January 2022

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      Dingdong Xie, Jie Jiang, Liming Ding. Anisotropic 2D materials for post-Moore photoelectric devices[J]. Journal of Semiconductors, 2022, 43(1): 010201. doi: 10.1088/1674-4926/43/1/010201 D D Xie, J Jiang, L M Ding, Anisotropic 2D materials for post-Moore photoelectric devices[J]. J. Semicond., 2022, 43(1): 010201. doi: 10.1088/1674-4926/43/1/010201.Export: BibTex EndNote
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      Dingdong Xie, Jie Jiang, Liming Ding. Anisotropic 2D materials for post-Moore photoelectric devices[J]. Journal of Semiconductors, 2022, 43(1): 010201. doi: 10.1088/1674-4926/43/1/010201

      D D Xie, J Jiang, L M Ding, Anisotropic 2D materials for post-Moore photoelectric devices[J]. J. Semicond., 2022, 43(1): 010201. doi: 10.1088/1674-4926/43/1/010201.
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      Anisotropic 2D materials for post-Moore photoelectric devices

      doi: 10.1088/1674-4926/43/1/010201
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      • Dingdong Xie:received his BE and ME from Hunan University of Humanities, Science and Technology in 2015 and Central South University in 2019, respectively. He is currently a PhD candidate in School of Physics and Electronics, Central South University under the supervision of Prof. Jie Jiang. His research focuses on neuromorphic devices
      • Jie Jiang:received BE and ME in electronic science and technology and PhD in physics from Hunan University in 2007, 2009, and 2012, respectively. He was a postdoc in Nanyang Technological University (2012–2013) and Auburn University (2014–2015), respectively. He is currently an Associate Professor in School of Physics and Electronics, Central South University. His research focuses on neuromorphic materials and devices
      • Liming Ding:got his PhD from University of Science and Technology of China (was a joint student at Changchun Institute of Applied Chemistry, CAS). He started his research on OSCs and PLEDs in Olle Inganäs Lab in 1998. Later on, he worked at National Center for Polymer Research, Wright-Patterson Air Force Base and Argonne National Lab (USA). He joined Konarka as a Senior Scientist in 2008. In 2010, he joined National Center for Nanoscience and Technology as a full professor. His research focuses on innovative materials and devices. He is RSC Fellow, the nominator for Xplorer Prize, and the Associate Editors for Science Bulletin and Journal of Semiconductors
      • Corresponding author: jiangjie@csu.edu.cnding@nanoctr.cn
      • Received Date: 2021-09-05
      • Published Date: 2022-01-10

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