Citation: |
Jing Yang, Degang Zhao, Zongshun Liu, Feng Liang, Ping Chen, Lihong Duan, Hai Wang, Yongsheng Shi. A 357.9 nm GaN/AlGaN multiple quantum well ultraviolet laser diode[J]. Journal of Semiconductors, 2022, 43(1): 010501. doi: 10.1088/1674-4926/43/1/010501
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J Yang, D G Zhao, Z S Liu, F Liang, P Chen, L H Duan, H Wang, Y S Shi, A 357.9 nm GaN/AlGaN multiple quantum well ultraviolet laser diode[J]. J. Semicond., 2022, 43(1): 010501. doi: 10.1088/1674-4926/43/1/010501.
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A 357.9 nm GaN/AlGaN multiple quantum well ultraviolet laser diode
DOI: 10.1088/1674-4926/43/1/010501
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References
[1] Nagahama S I, Yanamoto T, Sano M, et al. Study of GaN-based laser diodes in near ultraviolet region. Jpn J Appl Phys, 2002, 41, 5 doi: 10.1143/JJAP.41.5[2] Tsuzuki H, Mori F, Takeda K, et al. High-performance UV emitter grown on high-crystalline-quality AlGaN underlying layer. Phys Status Solidi A, 2009, 206, 1199 doi: 10.1002/pssa.200880784[3] Kneissl M, Treat D W, Teepe M, et al. Ultraviolet AlGaN multiple-quantum-well laser diodes. Appl Phys Lett, 2003, 82, 4441 doi: 10.1063/1.1585135[4] Taketomi H, Aoki Y, Takagi Y, et al. Over 1 W record-peak-power operation of a 338 nm AlGaN multiple-quantum-well laser diode on a GaN substrate. Jpn J Appl Phys, 2016, 55, 05FJ05 doi: 10.7567/JJAP.55.05FJ05[5] Yamashita Y, Kuwabara M, Torii K, et al. A 340-nm-band ultraviolet laser diode composed of GaN well layers. Opt Express, 2013, 3, 3133 doi: 10.1364/OE.21.003133[6] Nagahama S I, Sugimoto Y, Kozki T, et al. Recent progress of AlInGaN laser diodes. Proc SPIE, 2005, 5738 doi: 10.1117/12.597098[7] Yoshida H, Kuwabara M, Yamashita Y, et al. Radiative and nonradiative recombination in an ultraviolet GaN/AlGaN multiple-quantum-well laser diode. Appl Phys Lett, 2010, 96, 211122 doi: 10.1063/1.3442918[8] Zhao D G. III-nitride based ultraviolet laser diodes. J Semicond, 2019, 40, 120402 doi: 10.1088/1674-4926/40/12/120402[9] Yang J, Wang B B, Zhao D G, et al. Realization of 366nm GaN/AlGaN single quantum well ultraviolet laser diodes with a reduction of carrier loss in the waveguide layers. J Appl Phys, 2021, 130, 173105 doi: 10.1063/5.0069567[10] Masui S, Matsuyama, Y, Yanamoto T, et al. 365 nm ultraviolet laser diodes composed of quaternary AlInGaN alloy. Jpn J Appl Phys, 2003, 42, L1318 doi: 10.1143/JJAP.42.L1318[11] Aoki Y, Kuwabara M, Yamashita Y, et al. A 350-nm-band GaN/AlGaN multiple-quantum-well laser diode on bulk GaN. Appl Phys Lett, 2015, 107, 151103 doi: 10.1063/1.4933257[12] Crawford M H, Allerman A A, Armstrong A M, et al. Laser diodes with 353 nm wavelength enabled by reduced-dislocation-density AlGaN templates. Appl Phys Express, 2015, 8, 112702 doi: 10.7567/APEX.8.112702 -
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