Citation: |
K. S. Zhuravlev, A. L. Chizh, K. B. Mikitchuk, A. M. Gilinsky, I. B. Chistokhin, N. A. Valisheva, D. V. Dmitriev, A. I. Toropov, M. S. Aksenov. High-power InAlAs/InGaAs Schottky barrier photodiodes for analog microwave signal transmission[J]. Journal of Semiconductors, 2022, 43(1): 012302. doi: 10.1088/1674-4926/43/1/012302
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K S Zhuravlev, A L Chizh, K B Mikitchuk, A M Gilinsky, I B Chistokhin, N A Valisheva, D V Dmitriev, A I Toropov, M S Aksenov, High-power InAlAs/InGaAs Schottky barrier photodiodes for analog microwave signal transmission[J]. J. Semicond., 2022, 43(1): 012302. doi: 10.1088/1674-4926/43/1/012302.
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High-power InAlAs/InGaAs Schottky barrier photodiodes for analog microwave signal transmission
DOI: 10.1088/1674-4926/43/1/012302
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Abstract
The design, manufacturing and DC and microwave characterization of high-power Schottky barrier InAlAs/InGaAs back-illuminated mesa structure photodiodes are presented. The photodiodes with 10 and 15 μm mesa diameters operate at ≥40 and 28 GHz, respectively, have the output RF power as high as 58 mW at a frequency of 20 GHz, the DC responsivity of up to 1.08 A/W depending on the absorbing layer thickness, and a photodiode dark current as low as 0.04 nA. We show that these photodiodes provide an advantage in the amplitude-to-phase conversion factor which makes them suitable for use in high-speed analog transmission lines with stringent requirements for phase noise. -
References
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