Fig. 1.
(Color online) Structure diagram of the depletion GaN HEMT.
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| Citation: |
Shijie Pan, Shiwei Feng, Xuan Li, Zixuan Feng, Xiaozhuang Lu, Kun Bai, Yamin Zhang. Effects of 1 MeV electron radiation on the AlGaN/GaN high electron mobility transistors[J]. Journal of Semiconductors, 2024, 45(9): 092503. doi: 10.1088/1674-4926/24020020
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S J Pan, S W Feng, X Li, Z X Feng, X Z Lu, K Bai, and Y M Zhang, Effects of 1 MeV electron radiation on the AlGaN/GaN high electron mobility transistors[J]. J. Semicond., 2024, 45(9), 092503 doi: 10.1088/1674-4926/24020020
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Effects of 1 MeV electron radiation on the AlGaN/GaN high electron mobility transistors
DOI: 10.1088/1674-4926/24020020
More Information
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Shijie Pan received the B.S. degree in electronic science and technology from the Beijing University of Technology, Beijing, China, in 2018, where she is currently pursuing the Ph.D. degree in electronic science and technology with the Laboratory of Semiconductor Device Reliability Physics. Her current research interests include the reliability of gallium nitride devices -
Shiwei Feng received the B.S. and M.S. degrees from Jilin University, Changchun, China, in 1983 and 1986, respectively, and the Ph.D. degree from Beijing University of Technology, Beijing, China, in 1999. He was a Post-Doctoral Researcher with Howard University, Washington, DC, USA, in 2000, and with Rutgers University, Newark, NJ, USA, from 2001 to 2002. In 1986, he joined the Beijing University of Technology where he is currently a Professor with the Faculty of Information Technology. His current research interests include reliability physics of semiconductor devices and thermal management of semiconductor devices - Corresponding author: shwfeng@bjut.edu.cn
- Revised Date: 2024-05-15 Available Online: 2024-06-04
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Abstract
In this study, the effects of 1 MeV electron radiation on the D-mode GaN-based high electron mobility transistors (HEMTs) were investigated after different radiation doses. The changes in electrical properties of the device were obtained, and the related physical mechanisms were analyzed. It indicated that under the radiation dose of 5 × 1014 cm−2, the channel current cannot be completely pinched off even if the negative gate voltage was lower than the threshold voltage, and the gate leakage current increased significantly. The emission microscopy and scanning electron microscopy were used to determine the damage location. Besides, the radiation dose was adjusted ranging from 5 × 1012 to 1 × 1014 cm−2, and we noticed that the drain−source current increased and the threshold voltage presented slightly negative shift. By calculations, it suggested that the carrier density and electron mobility gradually increased. It provided a reference for the development of device radiation reinforcement technology. -
References
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