Fig. 1.
(Color online) Single pulse short-circuit test bench. (a) Schematic diagram and (b) physical diagram.
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| Citation: |
Yi Huang, Qiurui Chen, Rongyao Ma, Kaifeng Tang, Qi Wang, Hongsheng Zhang, Ji Ding, Dandan Xu, Sheng Gao, Genquan Han. Short-circuit failure modes and mechanism investigation of 1200 V planar SiC MOSFETs[J]. Journal of Semiconductors, 2024, 45(12): 122501. doi: 10.1088/1674-4926/24060009
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Y Huang, Q R Chen, R Y Ma, K F Tang, Q Wang, H S Zhang, J Ding, D D Xu, S Gao, and G Q Han, Short-circuit failure modes and mechanism investigation of 1200 V planar SiC MOSFETs[J]. J. Semicond., 2024, 45(12), 122501 doi: 10.1088/1674-4926/24060009
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Short-circuit failure modes and mechanism investigation of 1200 V planar SiC MOSFETs
DOI: 10.1088/1674-4926/24060009
More Information
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Yi Huang got his Ph.D. degree in 2012 at Nanjing University. He is currently a professor at the School of Optoelectronic Engineering, Chongqing University of Posts and Telecommunications, Chongqing, China. His main research interests include power chip design, third-generation semiconductor GaN, SiC devices, semiconductor optoelectronic display materials, and semiconductor nanomaterials -
Sheng Gao got the Ph.D. degree in 2022 at South China University of Technology. Then he joined Chongqing University of Posts and Telecommunications as a lecturer. He is currently serving as a postdoctoral fellow at China Resources Microelectronics (Chongqing) Co., LTD. His current research interests include the Ⅲ−Ⅴ nitride semiconductors and devices -
Genquan Han got the BS degree at Tsinghua University, and Ph.D. degree at Institute of Semiconductors. He is currently a doctoral supervisor at Xidian University, a national-level talent, a national-level young talent, and a chief scientist of a national key research and development program project. His current research interests include advanced CMOS devices, the Ⅲ−Ⅴ nitride semiconductors and devices - Corresponding author: gaosheng@cqupt.edu.cn
- Revised Date: 2024-09-10 Available Online: 2024-10-15
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Abstract
This paper presents a comprehensive analysis of the short-circuit failure mechanisms in commercial 1.2 kV planar silicon carbide (SiC) metal–oxide–semiconductor field-effect transistors (MOSFETs) under 400 and 800 V bus voltage conditions. The study compares two products with varying short-circuit tolerances, scrutinizing their external characteristics and intrinsic factors that influence their short-circuit endurance. Experimental and numerical analyses reveal that at 400 V, the differential thermal expansion between the source metal and the dielectric leads to cracking, which in turn facilitates the infiltration of liquid metal and results in a gate–source short circuit. At 800 V, the failure mechanism is markedly different, attributed to the thermal carrier effect leading to the degradation of the gate oxide, which impedes the device's capacity to switch off, thereby triggering thermal runaway. The paper proposes strategies to augment the short-circuit robustness of SiC MOSFETs at both voltage levels, with the objective of fortifying the device's resistance to such failures.-
Keywords:
- SiC MOSFETs,
- short-circuit failure mode,
- mechanical stresses,
- cracks,
- hot spot
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References
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