J. Semicond. > 2024, Volume 45 > Issue 12 > 122301
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The impact of plasmonic Ag−Au bimetallic nanoparticles on photocurrent enhancement in GaN-based photodetectors

Thi Kim Oanh Vu1, 2, , Thi Thu Phuong Bui1, Ngoc Anh Nguyen1, Thi Thanh Bao Nguyen1, Thi Minh Hien Nguyen1 and Eun Kyu Kim3,

+ Author Affiliations

 Corresponding author: Thi Kim Oanh Vu, vuthikimoanh92@gmail.com; Eun Kyu Kim, ek-kim@hanyang.ac.kr

DOI: 10.1088/1674-4926/24090014

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Abstract: Recently, there has been considerable interest in high-efficiency ultraviolet (UV) photodetectors for their potential practical uses. In this study, a high-quality UV photodetector was fabricated using a combination of Ag and Au NPs with GaN film. The GaN film was deposited using sputtering technique, whereas Ag and Au films were grown using thermal evaporation technique. Ag−Au bimetallic nanoparticles were formed by treating them at the various annealing temperature to improve the interaction between light and the photoactive layers of the photodetectors. The optimal annealing temperature to achieve the best performance of a photodetector is 650 °C. This led to a photoresponsivity of 98.5 A/W and the ON/OFF ratio of 705 at low bias voltage of 1 V. This work establishes the foundation for the advancement of high-performance UV photodetectors.

Key words: UV photodetectors, GaN, Ag−Au bimetallic nanoparticles, plasmonic effect



[1]
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[2]
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[3]
Nasiri N, Bo R H, Wang F, et al. Ultraporous electron-depleted ZnO nanoparticle networks for highly sensitive portable visible-blind UV photodetectors. Adv Mater, 2015, 27, 4336 doi: 10.1002/adma.201501517
[4]
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[5]
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[6]
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[7]
Gundimeda A, Krishna S, Aggarwal N, et al. Fabrication of non-polar GaN based highly responsive and fast UV photodetector. Appl Phys Lett, 2017, 110, 103507 doi: 10.1063/1.4978427
[8]
Liu K W, Sakurai M, Aono M. ZnO-based ultraviolet photodetectors. Sens Basel Switz, 2010, 10, 8604 doi: 10.3390/s100908604
[9]
Hsu C L, Chang S J. Doped ZnO 1D nanostructures: Synthesis, properties, and photodetector application. Small, 2014, 10, 4562 doi: 10.1002/smll.201401580
[10]
Shelke N T, Karle S C, Karche B R. Photoresponse properties of CdSe thin film photodetector. J Mater Sci Mater Electron, 2020, 31, 15061 doi: 10.1007/s10854-020-04069-0
[11]
Dutta A, Medda A, Bera R, et al. Hybrid nanostructures of 2D CdSe nanoplatelets for high-performance photodetector using charge transfer process. ACS Appl Nano Mater, 2020, 3, 4717 doi: 10.1021/acsanm.0c00728
[12]
Wei Y Z, Ren Z W, Zhang A D, et al. Hybrid organic/PbS quantum dot bilayer photodetector with low dark current and high detectivity. Adv Funct Mater, 2018, 28, 1706690 doi: 10.1002/adfm.201706690
[13]
Karthik Yadav P V, Ajitha B, Kumar Reddy Y A, et al. Enhanced performance of WO3 photodetectors through hybrid graphene-layer integration. ACS Appl Electron Mater, 2021, 3, 2056 doi: 10.1021/acsaelm.1c00073
[14]
Zhang X L, Liu B D, Liu Q Y, et al. Ultrasensitive and highly selective photodetections of UV-a rays based on individual bicrystalline GaN nanowire. ACS Appl Mater Interfaces, 2017, 9, 2669 doi: 10.1021/acsami.6b14907
[15]
Stoffels S, Mélotte M, Haussy M, et al. Stability evaluation of insulated gate AlGaN/GaN power switching devices under heavy-ion irradiation. IEEE Trans Nucl Sci, 2013, 60, 2712 doi: 10.1109/TNS.2013.2272331
[16]
Jain S K, Low M X, Taylor P D, et al. 2D/3D hybrid of MoS2/GaN for a high-performance broadband photodetector. ACS Appl Electron Mater, 2021, 3, 2407 doi: 10.1021/acsaelm.1c00299
[17]
Vu T K O, Tran M T, Xuan Tu N, et al. High performance of UV photodetectors by integration of plasmonic Ag nanoparticles on GaN. Mater Sci Semicond Process, 2024, 181, 108664 doi: 10.1016/j.mssp.2024.108664
[18]
Teker K, Alkhaldi A. Impact of gold nanoparticles on low-voltage operating GaN ultraviolet photodetector. Opt Eng, 2020, 59, 127110 doi: 10.1117/1.OE.59.12.127110
[19]
Zhang X L, Liu Q Y, Liu B D, et al. Giant UV photoresponse of a GaN nanowire photodetector through effective Pt nanoparticle coupling. J Mater Chem C, 2017, 5, 4319 doi: 10.1039/C7TC00594F
[20]
Shi S B, Gao Y Y, Xu J P. Influence of electrode materials (Ag, Au) on NiO/TiO2 heterojunction UV photodetectors. Optik, 2020, 224, 165705 doi: 10.1016/j.ijleo.2020.165705
[21]
Kang H, Buchman J T, Rodriguez R S, et al. Stabilization of silver and gold nanoparticles: Preservation and improvement of plasmonic functionalities. Chem Rev, 2019, 119, 664 doi: 10.1021/acs.chemrev.8b00341
[22]
Vu T K O, Tran M T, Phuong B T T, et al. Impact of controlling the barrier height on fabrication of high performance β-Ga2O3 solar-blind photodetectors. Appl Phys A, 2023, 129, 600 doi: 10.1007/s00339-023-06883-9
[23]
Goni A R, Siegle H, Syassen K, et al. Effect of pressure on optical phonon modes and tranverse effective charges in GaN and AlN. Phys Rev B, 2001, 64, 035205 doi: 10.1103/PhysRevB.64.035205
[24]
Shibin Krishna T C, Aggarwal N, Reddy G A, et al. Probing the correlation between structure, carrier dynamics and defect states of epitaxial GaN film on ( $11\bar{20} $) sapphire grown by rf-molecular beam epitaxy. RSC Adv, 2015, 5, 73261 doi: 10.1039/C5RA10099B
[25]
Lee M L, Huang F W, Chen P C, et al. GaN intermediate band solar cells with Mn-doped absorption layer. Sci Rep, 2018, 8, 8641 doi: 10.1038/s41598-018-27005-z
[26]
Ben Nasr F, Guermazi H, Guermazi S. Correlation between structural and optical properties of GaN epi-layers by the cathodoluminescence technique. Eur Phys J Plus, 2016, 131, 195 doi: 10.1140/epjp/i2016-16195-2
[27]
Vu T K O, Bao N T T, Phuong B T T, et al. Construction of Ag/Au bimetallic alloying nanoparticles on GaN films for high-performance SERS substrate, and modification of defect states. Appl Phys A, 2024, 130, 353 doi: 10.1007/s00339-024-07539-y
[28]
Jafarkhani P, Torkamany M J, Dadras S, et al. Necklace-shaped Au−Ag nanoalloys: Laser-assisted synthesis and nonlinear optical properties. Nanotechnology, 2011, 22, 235703 doi: 10.1088/0957-4484/22/23/235703
[29]
Kunwar S, Pandit S, Jeong J H, et al. Improved photoresponse of UV photodetectors by the incorporation of plasmonic nanoparticles on GaN through the resonant coupling of localized surface plasmon resonance. Nano Micro Lett, 2020, 12, 91 doi: 10.1007/s40820-020-00437-x
[30]
Guo D Y, Su Y L, Shi H Z, et al. Self-powered ultraviolet photodetector with superhigh photoresponsivity (3.05 A/W) based on the GaN/Sn: Ga2O3 pn junction. ACS Nano, 2018, 12, 12827 doi: 10.1021/acsnano.8b07997
[31]
Singh S K, Hazra P, Tripathi S, et al. Performance analysis of RF-sputtered ZnO/Si heterojunction UV photodetectors with high photo-responsivity. Superlattices Microstruct, 2016, 91, 62 doi: 10.1016/j.spmi.2015.12.036
[32]
Lee M, Vu T K O, Lee K S, et al. Electronic states of deep trap levels in a-plane GaN templates grown on r-plane sapphire by HVPE. Sci Rep, 2018, 8, 7814 doi: 10.1038/s41598-018-26290-y
[33]
Valenti M, Venugopal A, Tordera D, et al. Hot carrier generation and extraction of plasmonic alloy nanoparticles. ACS Photonics, 2017, 4, 1146 doi: 10.1021/acsphotonics.6b01048
Fig. 1.  (Color online) (a) Raman spectra and (b) the transmittance spectra of bare GaN.

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Fig. 2.  (Color online) (a) X-ray diffraction patterns of Ag−Au NPs/GaN heterojunction synthesized at the various temperatures and (b) a magnified image of plane (111) of the various sample (DV1 to DV4).

DownLoad: Full-Size Img PowerPoint
Fig. 3.  (Color online) (a) Normalized Ag 3d XPS spectra, (b) Au 4f XPS spectra and (c) XPS survey for Ag AuNPs/GaN.

DownLoad: Full-Size Img PowerPoint
Fig. 4.  (Color online) (a) The structure of Ag−Au NPs/GaN heterojunction-based UV photodetector, (b) and (c) photocurrent−voltage curves under illumination of 365 nm, and (d) the ON/OFF ratio of devices fabricated without and with Ag−Au alloys.

DownLoad: Full-Size Img PowerPoint
Fig. 5.  (Color online) The current−time on the ON/OFF state of (a) bare GaN-based device and (b) DV3-Ag−Au NPs/GaN-based device. (c) Responsivity and (d) external quantum efficiency of Ag−Au NPs/GaN-based photodetector treated at 650 °C.

DownLoad: Full-Size Img PowerPoint
Fig. 6.  (Color online) The energy level diagram and the transfer of chargers mechanism of a NPs/GaN-based photodetector.

DownLoad: Full-Size Img PowerPoint
[1]
Ouyang B S, Zhang K W, Yang Y. Self-powered UV photodetector array based on P3HT/ZnO nanowire array heterojunction. Adv Mater Technol, 2017, 2, 1700208 doi: 10.1002/admt.201700208
[2]
Liu S, Li M Y, Zhang J, et al. Self-assembled Al nanostructured/ZnO quantum dot heterostructures for high responsivity and fast UV photodetector. Nano-Micro Lett, 2020, 12, 114 doi: 10.1007/s40820-020-00455-9
[3]
Nasiri N, Bo R H, Wang F, et al. Ultraporous electron-depleted ZnO nanoparticle networks for highly sensitive portable visible-blind UV photodetectors. Adv Mater, 2015, 27, 4336 doi: 10.1002/adma.201501517
[4]
Nguyen T M H, Shin S G, Choi H W, et al. Recent advances in self-powered and flexible UVC photodetectors. Exploration, 2022, 2, 20210078 doi: 10.1002/EXP.20210078
[5]
Gorokhov E V, Magunov A N, Feshchenko V S, et al. Solar-blind UV flame detector based on natural diamond. Instrum Exp Tech, 2008, 51, 280 doi: 10.1134/S002044120802022X
[6]
So H, Lim J, Senesky D G. Continuous V-grooved AlGaN/GaN surfaces for high-temperature ultraviolet photodetectors. IEEE Sens J, 2016, 16, 3633 doi: 10.1109/JSEN.2016.2531181
[7]
Gundimeda A, Krishna S, Aggarwal N, et al. Fabrication of non-polar GaN based highly responsive and fast UV photodetector. Appl Phys Lett, 2017, 110, 103507 doi: 10.1063/1.4978427
[8]
Liu K W, Sakurai M, Aono M. ZnO-based ultraviolet photodetectors. Sens Basel Switz, 2010, 10, 8604 doi: 10.3390/s100908604
[9]
Hsu C L, Chang S J. Doped ZnO 1D nanostructures: Synthesis, properties, and photodetector application. Small, 2014, 10, 4562 doi: 10.1002/smll.201401580
[10]
Shelke N T, Karle S C, Karche B R. Photoresponse properties of CdSe thin film photodetector. J Mater Sci Mater Electron, 2020, 31, 15061 doi: 10.1007/s10854-020-04069-0
[11]
Dutta A, Medda A, Bera R, et al. Hybrid nanostructures of 2D CdSe nanoplatelets for high-performance photodetector using charge transfer process. ACS Appl Nano Mater, 2020, 3, 4717 doi: 10.1021/acsanm.0c00728
[12]
Wei Y Z, Ren Z W, Zhang A D, et al. Hybrid organic/PbS quantum dot bilayer photodetector with low dark current and high detectivity. Adv Funct Mater, 2018, 28, 1706690 doi: 10.1002/adfm.201706690
[13]
Karthik Yadav P V, Ajitha B, Kumar Reddy Y A, et al. Enhanced performance of WO3 photodetectors through hybrid graphene-layer integration. ACS Appl Electron Mater, 2021, 3, 2056 doi: 10.1021/acsaelm.1c00073
[14]
Zhang X L, Liu B D, Liu Q Y, et al. Ultrasensitive and highly selective photodetections of UV-a rays based on individual bicrystalline GaN nanowire. ACS Appl Mater Interfaces, 2017, 9, 2669 doi: 10.1021/acsami.6b14907
[15]
Stoffels S, Mélotte M, Haussy M, et al. Stability evaluation of insulated gate AlGaN/GaN power switching devices under heavy-ion irradiation. IEEE Trans Nucl Sci, 2013, 60, 2712 doi: 10.1109/TNS.2013.2272331
[16]
Jain S K, Low M X, Taylor P D, et al. 2D/3D hybrid of MoS2/GaN for a high-performance broadband photodetector. ACS Appl Electron Mater, 2021, 3, 2407 doi: 10.1021/acsaelm.1c00299
[17]
Vu T K O, Tran M T, Xuan Tu N, et al. High performance of UV photodetectors by integration of plasmonic Ag nanoparticles on GaN. Mater Sci Semicond Process, 2024, 181, 108664 doi: 10.1016/j.mssp.2024.108664
[18]
Teker K, Alkhaldi A. Impact of gold nanoparticles on low-voltage operating GaN ultraviolet photodetector. Opt Eng, 2020, 59, 127110 doi: 10.1117/1.OE.59.12.127110
[19]
Zhang X L, Liu Q Y, Liu B D, et al. Giant UV photoresponse of a GaN nanowire photodetector through effective Pt nanoparticle coupling. J Mater Chem C, 2017, 5, 4319 doi: 10.1039/C7TC00594F
[20]
Shi S B, Gao Y Y, Xu J P. Influence of electrode materials (Ag, Au) on NiO/TiO2 heterojunction UV photodetectors. Optik, 2020, 224, 165705 doi: 10.1016/j.ijleo.2020.165705
[21]
Kang H, Buchman J T, Rodriguez R S, et al. Stabilization of silver and gold nanoparticles: Preservation and improvement of plasmonic functionalities. Chem Rev, 2019, 119, 664 doi: 10.1021/acs.chemrev.8b00341
[22]
Vu T K O, Tran M T, Phuong B T T, et al. Impact of controlling the barrier height on fabrication of high performance β-Ga2O3 solar-blind photodetectors. Appl Phys A, 2023, 129, 600 doi: 10.1007/s00339-023-06883-9
[23]
Goni A R, Siegle H, Syassen K, et al. Effect of pressure on optical phonon modes and tranverse effective charges in GaN and AlN. Phys Rev B, 2001, 64, 035205 doi: 10.1103/PhysRevB.64.035205
[24]
Shibin Krishna T C, Aggarwal N, Reddy G A, et al. Probing the correlation between structure, carrier dynamics and defect states of epitaxial GaN film on ( $11\bar{20} $) sapphire grown by rf-molecular beam epitaxy. RSC Adv, 2015, 5, 73261 doi: 10.1039/C5RA10099B
[25]
Lee M L, Huang F W, Chen P C, et al. GaN intermediate band solar cells with Mn-doped absorption layer. Sci Rep, 2018, 8, 8641 doi: 10.1038/s41598-018-27005-z
[26]
Ben Nasr F, Guermazi H, Guermazi S. Correlation between structural and optical properties of GaN epi-layers by the cathodoluminescence technique. Eur Phys J Plus, 2016, 131, 195 doi: 10.1140/epjp/i2016-16195-2
[27]
Vu T K O, Bao N T T, Phuong B T T, et al. Construction of Ag/Au bimetallic alloying nanoparticles on GaN films for high-performance SERS substrate, and modification of defect states. Appl Phys A, 2024, 130, 353 doi: 10.1007/s00339-024-07539-y
[28]
Jafarkhani P, Torkamany M J, Dadras S, et al. Necklace-shaped Au−Ag nanoalloys: Laser-assisted synthesis and nonlinear optical properties. Nanotechnology, 2011, 22, 235703 doi: 10.1088/0957-4484/22/23/235703
[29]
Kunwar S, Pandit S, Jeong J H, et al. Improved photoresponse of UV photodetectors by the incorporation of plasmonic nanoparticles on GaN through the resonant coupling of localized surface plasmon resonance. Nano Micro Lett, 2020, 12, 91 doi: 10.1007/s40820-020-00437-x
[30]
Guo D Y, Su Y L, Shi H Z, et al. Self-powered ultraviolet photodetector with superhigh photoresponsivity (3.05 A/W) based on the GaN/Sn: Ga2O3 pn junction. ACS Nano, 2018, 12, 12827 doi: 10.1021/acsnano.8b07997
[31]
Singh S K, Hazra P, Tripathi S, et al. Performance analysis of RF-sputtered ZnO/Si heterojunction UV photodetectors with high photo-responsivity. Superlattices Microstruct, 2016, 91, 62 doi: 10.1016/j.spmi.2015.12.036
[32]
Lee M, Vu T K O, Lee K S, et al. Electronic states of deep trap levels in a-plane GaN templates grown on r-plane sapphire by HVPE. Sci Rep, 2018, 8, 7814 doi: 10.1038/s41598-018-26290-y
[33]
Valenti M, Venugopal A, Tordera D, et al. Hot carrier generation and extraction of plasmonic alloy nanoparticles. ACS Photonics, 2017, 4, 1146 doi: 10.1021/acsphotonics.6b01048

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    Received: 09 September 2024 Revised: 27 September 2024 Online: Accepted Manuscript: 01 November 2024Uncorrected proof: 12 November 2024Published: 15 December 2024

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      Article Navigation >  Journal of Semiconductors  > 2024  >  45(12): 122301
      Thi Kim Oanh Vu, Thi Thu Phuong Bui, Ngoc Anh Nguyen, Thi Thanh Bao Nguyen, Thi Minh Hien Nguyen, Eun Kyu Kim. The impact of plasmonic Ag−Au bimetallic nanoparticles on photocurrent enhancement in GaN-based photodetectors[J]. Journal of Semiconductors, 2024, 45(12): 122301. doi: 10.1088/1674-4926/24090014 ****T K O Vu, T T P Bui, N A Nguyen, T T B Nguyen, T M H Nguyen, and E K Kim, The impact of plasmonic Ag−Au bimetallic nanoparticles on photocurrent enhancement in GaN-based photodetectors[J]. J. Semicond., 2024, 45(12), 122301 doi: 10.1088/1674-4926/24090014
      Citation:
      Thi Kim Oanh Vu, Thi Thu Phuong Bui, Ngoc Anh Nguyen, Thi Thanh Bao Nguyen, Thi Minh Hien Nguyen, Eun Kyu Kim. The impact of plasmonic Ag−Au bimetallic nanoparticles on photocurrent enhancement in GaN-based photodetectors[J]. Journal of Semiconductors, 2024, 45(12): 122301. doi: 10.1088/1674-4926/24090014 ****
      T K O Vu, T T P Bui, N A Nguyen, T T B Nguyen, T M H Nguyen, and E K Kim, The impact of plasmonic Ag−Au bimetallic nanoparticles on photocurrent enhancement in GaN-based photodetectors[J]. J. Semicond., 2024, 45(12), 122301 doi: 10.1088/1674-4926/24090014
      shu

      The impact of plasmonic Ag−Au bimetallic nanoparticles on photocurrent enhancement in GaN-based photodetectors

      DOI: 10.1088/1674-4926/24090014
      • 1.

        No. 10 Dao Tan, Institute of Physics, Vietnam Academy of Science and Technology, No. 10 Dao Tan, Hanoi 118000, Vietnam

      • 2.

        Graduate University of Science and Technology, Vietnam Academy of Science and Technology, 18 Hoang Quoc Viet, Hanoi 122300, Vietnam

      • 3.

        Department of Physics and Research Institute for Natural Sciences, Hanyang University, Seoul 04763, Republic of Korea

      More Information
      • Thi Kim Oanh Vu received her Doctoral degree from Hanyang University, Seoul, Republic of Korea, in 2021. Now she is lecturer and researcher at Department of Physics, Graduate University of Science and Technology, Vietnam Academy of Science and Technology. Her currently research interests include metal oxide materials, optoelectronic devices
      • Eun Kyu Kim received the B.S. degree (1979) from Kyungpook National University, Daegu, and the M.S. in condensed matter physics and Ph.D. degrees in semiconductor physics from Korea University, Seoul, Korea, in 1984 and 1988, respectively. From 1993 to 1994, he was a visiting researcher at RIKEN, Wako, Japan. Since 2002, he was a Professor of Department of Physics at Hanyang University, Seoul, Korea. His current research interests include new electronic devices and spintronics with hybrid structure of magnetic and semiconductor, semiconductor nano-structures
      • Corresponding author: vuthikimoanh92@gmail.com; ek-kim@hanyang.ac.kr
      • Received Date: 2024-09-09
      • Revised Date: 2024-09-27
        • Available Online: 2024-11-01

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