Citation: |
Liang Chu, Wenjun Li. A leap forward in compute-in-memory system for neural network inference[J]. Journal of Semiconductors, 2025, 46(4): 040401. doi: 10.1088/1674-4926/25020028
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L Chu and W J Li, A leap forward in compute-in-memory system for neural network inference[J]. J. Semicond., 2025, 46(4), 040401 doi: 10.1088/1674-4926/25020028
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A leap forward in compute-in-memory system for neural network inference
DOI: 10.1088/1674-4926/25020028
CSTR: 32376.14.1674-4926.25020028
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References
[1] Yao P, Wu H Q, Gao B, et al. Fully hardware-implemented memristor convolutional neural network. Nature, 2020, 577(7792), 641 doi: 10.1038/s41586-020-1942-4[2] Lanza M, Sebastian A, Lu W D, et al. Memristive technologies for data storage, computation, encryption, and radio-frequency communication. Science, 2022, 376(6597), eabj9979 doi: 10.1126/science.abj9979[3] Pi S, Li C, Jiang H, et al. Memristor crossbar arrays with 6-nm half-pitch and 2-nm critical dimension. Nat Nanotechnol, 2019, 14(1), 35 doi: 10.1038/s41565-018-0302-0[4] Verma N, Jia H Y, Valavi H, et al. In-memory computing: Advances and prospects. IEEE Solid State Circuits Mag, 2019, 11(3), 43 doi: 10.1109/MSSC.2019.2922889[5] Wang Z, Yu R H, Jia Z P, et al. A dual-domain compute-in-memory system for general neural network inference. Nat Electron, 2025 doi: 10.1038/s41928-024-01315-9[6] Park J S, Park C, Kwon S, et al. A multi-mode 8k-MAC HW-utilization-aware neural processing unit with a unified multi-precision datapath in 4-nm flagship mobile SoC. IEEE J Solid State Circuits, 2023, 58(1), 189 doi: 10.1109/JSSC.2022.3205713[7] Chen J, Li J C, Li Y, et al. Multiply accumulate operations in memristor crossbar arrays for analog computing. J Semicond, 2021, 42(1), 013104 doi: 10.1088/1674-4926/42/1/013104[8] Gong J Q, Ji S L, Li J T, et al. Three-dimensional/one-dimensional perovskite heterostructures for stable tri-state synaptic memristors. Sci China Mater, 2024, 67(9), 2848 doi: 10.1007/s40843-024-2981-7[9] De Camaret C, Bourgeois G, Antonelli R, et al. Effects of carbon lateral implantation in Ge-rich GeSbTe phase-change memory. IEEE Electron Device Lett, 2025, 46(3), 385 doi: 10.1109/LED.2025.3531547[10] Chen J G, Wen Z X, Yang F, et al. Refreshable memristor via dynamic allocation of Ferro-ionic phase for neural reuse. Nat Commun, 2025, 16(1), 702 doi: 10.1038/s41467-024-55701-0 -
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