Simulation for signal charge transfer of charge coupled devices

Wang Zujun; Liu Yinong; Chen Wei; Tang Benqi; Xiao Zhigang; Huang Shaoyan; Liu Minbo; Zhang Yong

doi:10.1088/1674-4926/30/12/124007

Article Navigation > Journal of Semiconductors > 2009 > 30(12): 124007

Wang Zujun, Liu Yinong, Chen Wei, Tang Benqi, Xiao Zhigang, Huang Shaoyan, Liu Minbo, Zhang Yong. Simulation for signal charge transfer of charge coupled devices[J]. Journal of Semiconductors, 2009, 30(12): 124007. doi: 10.1088/1674-4926/30/12/124007 ****Wang Z J, Liu Y N, Chen W, Tang B Q, Xiao Z G, Huang S Y, Liu M B, Zhang Y. Simulation for signal charge transfer of charge coupled devices[J]. J. Semicond., 2009, 30(12): 124007. doi: 10.1088/1674-4926/30/12/124007.

Citation:

Wang Zujun, Liu Yinong, Chen Wei, Tang Benqi, Xiao Zhigang, Huang Shaoyan, Liu Minbo, Zhang Yong. Simulation for signal charge transfer of charge coupled devices[J]. Journal of Semiconductors, 2009, 30(12): 124007. doi: 10.1088/1674-4926/30/12/124007 ****

Wang Z J, Liu Y N, Chen W, Tang B Q, Xiao Z G, Huang S Y, Liu M B, Zhang Y. Simulation for signal charge transfer of charge coupled devices[J]. J. Semicond., 2009, 30(12): 124007. doi: 10.1088/1674-4926/30/12/124007.

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Simulation for signal charge transfer of charge coupled devices

DOI: 10.1088/1674-4926/30/12/124007

Department of Engineering Physics, Key Laboratory of Particle & Radiation Imaging of Ministry of Education, Tsinghua University, Beijing 100084, China
Northwest Institute of Nuclear Technology, Xi'an 710024, China
Department of Engineering Physics, Key Laboratory of Particle & Radiation Imaging of Ministry of Education, Tsinghua University, Beijing 100084, China
Northwest Institute of Nuclear Technology, Xi'an 710024, China
Northwest Institute of Nuclear Technology, Xi'an 710024, China
Northwest Institute of Nuclear Technology, Xi'an 710024, China
Northwest Institute of Nuclear Technology, Xi'an 710024, China
Northwest Institute of Nuclear Technology, Xi'an 710024, China
Northwest Institute of Nuclear Technology, Xi'an 710024, China

Received Date: 2015-08-18
Accepted Date: 2009-06-22
Revised Date: 2009-08-04
Published Date: 2009-12-04

Abstract

Abstract

Physical device models and numerical processing methods are presented to simulate a linear buried channel charge coupled devices (CCDs). The dynamic transfer process of CCD is carried out by a three-phase clock pulse driver. By using the semiconductor device simulation software MEDICI, dynamic transfer pictures of signal charges cells, electron concentration and electrostatic potential are presented. The key parameters of CCD such as charge transfer efficiency (CTE) and dark electrons are numerically simulated. The simulation results agree with the theoretic and experimental results.
- CCD

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Simulation for signal charge transfer of charge coupled devices

DOI: 10.1088/1674-4926/30/12/124007

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Simulation for signal charge transfer of charge coupled devices

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