J. Semicond. > 2009, Volume 30 > Issue 12 > 124008
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SEMICONDUCTOR DEVICES

Microwave dynamic large signal waveform characterization of advanced InGaP HBT for power amplifiers

Zhao Lixin, Jin Zhi and Liu Xinyu

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DOI: 10.1088/1674-4926/30/12/124008

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Abstract: In wireless mobile communications and wireless local area networks (WLAN), advanced InGaP HBT with power amplifiers are key components. In this paper, the microwave large signal dynamic waveform characteristics of an advanced InGaP HBT are investigated experimentally for 5.8 GHz power amplifier applications. The microwave large signal waveform distortions at various input power levels, especially at large signal level, are investigated and the reasons are analyzed. The output power saturation is also explained. These analyses will be useful for power amplifier designs.

Key words: large signal dynamic characteristics,  InGaP HBT,  waveform distortion, 失真

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    Received: 18 August 2015 Revised: 14 August 2009 Online: Published: 01 December 2009

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      Article Navigation >  Journal of Semiconductors  > 2009  >  30(12): 124008
      Zhao Lixin, Jin Zhi, Liu Xinyu. Microwave dynamic large signal waveform characterization of advanced InGaP HBT for power amplifiers[J]. Journal of Semiconductors, 2009, 30(12): 124008. doi: 10.1088/1674-4926/30/12/124008 ****Zhao L X, Jin Z, Liu X Y. Microwave dynamic large signal waveform characterization of advanced InGaP HBT for power amplifiers[J]. J. Semicond., 2009, 30(12): 124008. doi: 10.1088/1674-4926/30/12/124008.
      Citation:
      Zhao Lixin, Jin Zhi, Liu Xinyu. Microwave dynamic large signal waveform characterization of advanced InGaP HBT for power amplifiers[J]. Journal of Semiconductors, 2009, 30(12): 124008. doi: 10.1088/1674-4926/30/12/124008 ****
      Zhao L X, Jin Z, Liu X Y. Microwave dynamic large signal waveform characterization of advanced InGaP HBT for power amplifiers[J]. J. Semicond., 2009, 30(12): 124008. doi: 10.1088/1674-4926/30/12/124008.
      shu

      Microwave dynamic large signal waveform characterization of advanced InGaP HBT for power amplifiers

      DOI: 10.1088/1674-4926/30/12/124008

      • Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China

      • Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China

      • Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China

      • Received Date: 2015-08-18
      • Accepted Date: 2009-06-23
      • Revised Date: 2009-08-14
      • Published Date: 2009-12-04

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