Chemical mechanical polishing of freestanding GaN substrates

Yan Huaiyue; Xiu Xiangqian; Liu Zhanhui; Zhang Rong; Hua Xuemei; Xie Zili; Han Ping; Shi Yi; Zheng Youdou

doi:10.1088/1674-4926/30/2/023003

Article Navigation > Journal of Semiconductors > 2009 > 30(2): 023003

Yan Huaiyue, Xiu Xiangqian, Liu Zhanhui, Zhang Rong, Hua Xuemei, Xie Zili, Han Ping, Shi Yi, Zheng Youdou. Chemical mechanical polishing of freestanding GaN substrates[J]. Journal of Semiconductors, 2009, 30(2): 023003. doi: 10.1088/1674-4926/30/2/023003 ****Yan H Y, Xiu X Q, Liu Z H, Zhang R, Hua X M, Xie Z L, Han P, Shi Y, Zheng Y D. Chemical mechanical polishing of freestanding GaN substrates[J]. J. Semicond., 2009, 30(2): 023003. doi: 10.1088/1674-4926/30/2/023003.

Citation:

Yan Huaiyue, Xiu Xiangqian, Liu Zhanhui, Zhang Rong, Hua Xuemei, Xie Zili, Han Ping, Shi Yi, Zheng Youdou. Chemical mechanical polishing of freestanding GaN substrates[J]. Journal of Semiconductors, 2009, 30(2): 023003. doi: 10.1088/1674-4926/30/2/023003 ****

Yan H Y, Xiu X Q, Liu Z H, Zhang R, Hua X M, Xie Z L, Han P, Shi Y, Zheng Y D. Chemical mechanical polishing of freestanding GaN substrates[J]. J. Semicond., 2009, 30(2): 023003. doi: 10.1088/1674-4926/30/2/023003.

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Chemical mechanical polishing of freestanding GaN substrates

DOI: 10.1088/1674-4926/30/2/023003

Key Laboratory of Advanced Photonic and Electronic Materials, Department of Physics, Nanjing University, Nanjing 210093, China
Key Laboratory of Advanced Photonic and Electronic Materials, Department of Physics, Nanjing University, Nanjing 210093, China
Key Laboratory of Advanced Photonic and Electronic Materials, Department of Physics, Nanjing University, Nanjing 210093, China
Key Laboratory of Advanced Photonic and Electronic Materials, Department of Physics, Nanjing University, Nanjing 210093, China
Key Laboratory of Advanced Photonic and Electronic Materials, Department of Physics, Nanjing University, Nanjing 210093, China
Key Laboratory of Advanced Photonic and Electronic Materials, Department of Physics, Nanjing University, Nanjing 210093, China
Key Laboratory of Advanced Photonic and Electronic Materials, Department of Physics, Nanjing University, Nanjing 210093, China
Key Laboratory of Advanced Photonic and Electronic Materials, Department of Physics, Nanjing University, Nanjing 210093, China
Key Laboratory of Advanced Photonic and Electronic Materials, Department of Physics, Nanjing University, Nanjing 210093, China

Received Date: 2015-08-18
Accepted Date: 2008-07-24
Revised Date: 2008-10-15
Published Date: 2009-02-16

Abstract

Abstract

Chemical mechanical polishing (CMP) has been used to produce smooth and scratch-free surfaces for GaN. In the aqueous solution of KOH, GaN is subjected to etching. At the same time, all surface irregularities, including etch pyramids, roughness after mechanical polishing and so on will be removed by a polishing pad. The experiments had been performed under the condition of different abrasive particle sizes of the polishing pad. Also the polishing results for different polishing times are analyzed, and chemical mechanical polishing resulted in an average root mean square (RMS) surface roughness of 0.565 nm, as measured by atomic force microscopy.
- GaN,
- chemical mechanical polishing,
- epitaxial layers

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Chemical mechanical polishing of freestanding GaN substrates

DOI: 10.1088/1674-4926/30/2/023003

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Chemical mechanical polishing of freestanding GaN substrates

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