J. Semicond. > 2009, Volume 30 > Issue 3 > 034006
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SEMICONDUCTOR DEVICES

Benchmarktests on symmetry and continuity characteristics between BSIM4 and ULTRA-BULK

Niu Xudong, Li Bo, Song Yan, Zhang Lining and He Jin

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DOI: 10.1088/1674-4926/30/3/034006

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Abstract: This paper presents the benchmark test results on the symmetry and continuity characteristics between BSIM4 from Berkeley and ULTRA-BULK from Peking University. It is shown that the industry standard model BSIM4 has a series of the shortcomings of the continuity and symmetry, such as the charge, high-order current derivatives, and the trans-capacitances while the latest advanced surface-potential based MOSFET compact model, ULTRA-BULK, demonstrates all necessary continuity and symmetry characteristics, which are very important for analog and RF circuit design.

Key words: compact model

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    Received: 18 August 2015 Revised: 15 November 2008 Online: Published: 01 March 2009

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      Article Navigation >  Journal of Semiconductors  > 2009  >  30(3): 034006
      Niu Xudong, Li Bo, Song Yan, Zhang Lining, He Jin. Benchmarktests on symmetry and continuity characteristics between BSIM4 and ULTRA-BULK[J]. Journal of Semiconductors, 2009, 30(3): 034006. doi: 10.1088/1674-4926/30/3/034006 ****Niu X D, Li B, Song Y, Zhang L N, He J. Benchmarktests on symmetry and continuity characteristics between BSIM4 and ULTRA-BULK[J]. J. Semicond., 2009, 30(3): 034006. doi: 10.1088/1674-4926/30/3/034006.
      Citation:
      Niu Xudong, Li Bo, Song Yan, Zhang Lining, He Jin. Benchmarktests on symmetry and continuity characteristics between BSIM4 and ULTRA-BULK[J]. Journal of Semiconductors, 2009, 30(3): 034006. doi: 10.1088/1674-4926/30/3/034006 ****
      Niu X D, Li B, Song Y, Zhang L N, He J. Benchmarktests on symmetry and continuity characteristics between BSIM4 and ULTRA-BULK[J]. J. Semicond., 2009, 30(3): 034006. doi: 10.1088/1674-4926/30/3/034006.
      shu

      Benchmarktests on symmetry and continuity characteristics between BSIM4 and ULTRA-BULK

      DOI: 10.1088/1674-4926/30/3/034006

      • Micro and Nano Electric Device and Integrated Group, The Key Laboratory of Integrated Microsystems, Peking University Shenzhen Graduate School, Shenzhen 518055,China

      • TSRC, Key Laboratory of Microelectronics, Devices and Circuits of Ministry of Education,

      • Micro and Nano Electric Device and Integrated Group, The Key Laboratory of Integrated Microsystems, Peking University Shenzhen Graduate School, Shenzhen 518055,China

      • TSRC, Key Laboratory of Microelectronics, Devices and Circuits of Ministry of Education,

      • TSRC, Key Laboratory of Microelectronics, Devices and Circuits of Ministry of Education, School of Electronics and Computer Science, Peking University, Beijing 100871, China

      • TSRC, Key Laboratory of Microelectronics, Devices and Circuits of Ministry of Education, School of Electronics and Computer Science, Peking University, Beijing 100871, China

      • Micro and Nano Electric Device and Integrated Group, The Key Laboratory of Integrated Microsystems, Peking University Shenzhen Graduate School, Shenzhen 518055,China

      • TSRC, Key Laboratory of Microelectronics, Devices and Circuits of Ministry of Education,

      • Received Date: 2015-08-18
      • Accepted Date: 2008-05-20
      • Revised Date: 2008-11-15
      • Published Date: 2009-03-12

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