Optimization of n/i and i/p buffer layers in n–i–p hydrogenated microcrystalline silicon solar cells

Yuan Yujie; Hou Guofu; Zhang Jianjun; Xue Junming; Cao Liran; Zhao Ying; Geng Xinhua

doi:10.1088/1674-4926/30/3/034007

J. Semicond. > 2009, Volume 30 > Issue 3 > 034007

SEMICONDUCTOR DEVICES

Optimization of n/i and i/p buffer layers in n–i–p hydrogenated microcrystalline silicon solar cells

Yuan Yujie, Hou Guofu, Zhang Jianjun, Xue Junming, Cao Liran, Zhao Ying and Geng Xinhua

+ Author Affiliations

Institute of Photoelectronics, Nankai University, Tianjin 300071, China
Tianjin Key Laboratory of Photoelectronic Thin Film Devices and Technology, Tianjin 300071, China
Key Laboratory of Optoelectronic Information Science and Technology, Chinese Ministr
Institute of Photoelectronics, Nankai University, Tianjin 300071, China
Tianjin Key Laboratory of Photoelectronic Thin Film Devices and Technology, Tianjin 300071, China
Key Laboratory of Optoelectronic Information Science and Technology, Chinese Ministr
Institute of Photoelectronics, Nankai University, Tianjin 300071, China
Tianjin Key Laboratory of Photoelectronic Thin Film Devices and Technology, Tianjin 300071, China
Key Laboratory of Optoelectronic Information Science and Technology, Chinese Ministr
Institute of Photoelectronics, Nankai University, Tianjin 300071, China
Tianjin Key Laboratory of Photoelectronic Thin Film Devices and Technology, Tianjin 300071, China
Key Laboratory of Optoelectronic Information Science and Technology, Chinese Ministr
Institute of Photoelectronics, Nankai University, Tianjin 300071, China
Tianjin Key Laboratory of Photoelectronic Thin Film Devices and Technology, Tianjin 300071, China
Key Laboratory of Optoelectronic Information Science and Technology, Chinese Ministr
Institute of Photoelectronics, Nankai University, Tianjin 300071, China
Tianjin Key Laboratory of Photoelectronic Thin Film Devices and Technology, Tianjin 300071, China
Key Laboratory of Optoelectronic Information Science and Technology, Chinese Ministr
Institute of Photoelectronics, Nankai University, Tianjin 300071, China
Tianjin Key Laboratory of Photoelectronic Thin Film Devices and Technology, Tianjin 300071, China
Key Laboratory of Optoelectronic Information Science and Technology, Chinese Ministr

DOI: 10.1088/1674-4926/30/3/034007

Abstract: Hydrogenated microcrystalline silicon ( c-Si:H) intrinsic films and solar cells with n–i–p configuration were prepared by plasma enhanced chemical vapor deposition (PECVD). The influence of n/i and i/p buffer layers on the c-Si:H cell performance was studied in detail. The experimental results demonstrated that the efficiency is much improved when there is a higher crystallinity at n/i interface and an optimized a-Si:H buffer layer at i/p interface. By combining the above methods, the performance of c-Si:H single-junction and a-Si:H/ c-Si:H tandem solar cells has been significantly improved.

Key words: microcrystalline silicon

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Yuan Yujie, Hou Guofu, Zhang Jianjun, Xue Junming, Cao Liran, Zhao Ying, Geng Xinhua. Optimization of n/i and i/p buffer layers in n–i–p hydrogenated microcrystalline silicon solar cells[J]. Journal of Semiconductors, 2009, 30(3): 034007. doi: 10.1088/1674-4926/30/3/034007

Yuan Y J, Hou G F, Zhang J J, Xue J M, Cao L R, Zhao Y, Geng X H. Optimization of n/i and i/p buffer layers in n–i–p hydrogenated microcrystalline silicon solar cells[J]. J. Semicond., 2009, 30(3): 034007. doi: 10.1088/1674-4926/30/3/034007.

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Received: 18 August 2015 Revised: 05 November 2008 Online: Published: 01 March 2009

Hydrogenated microcrystalline silicon ( c-Si:H) intrinsic films and solar cells with n–i–p configuration were prepared by plasma enhanced chemical vapor deposition (PECVD). The influence of n/i and i/p buffer layers on the c-Si:H cell performance was studied in detail. The experimental results demonstrated that the efficiency is much improved when there is a higher crystallinity at n/i interface and an optimized a-Si:H buffer layer at i/p interface. By combining the above methods, the performance of c-Si:H single-junction and a-Si:H/ c-Si:H tandem solar cells has been significantly improved.

Optimization of n/i and i/p buffer layers in n–i–p hydrogenated microcrystalline silicon solar cells

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