Citation: |
Li Weinan, Huang Yumei, Hong Zhiliang. A low power 3–5 GHz CMOS UWB receiver front-end[J]. Journal of Semiconductors, 2009, 30(3): 035005. doi: 10.1088/1674-4926/30/3/035005
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Li W N, Huang Y M, Hong Z L. A low power 3–5 GHz CMOS UWB receiver front-end[J]. J. Semicond., 2009, 30(3): 035005. doi: 10.1088/1674-4926/30/3/035005.
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Abstract
A novel low power RF receiver front-end for 3–5 GHz UWB is presented. Designed in the 0.13 μm CMOS process, the direct conversion receiver features a wideband balun-coupled noise cancelling transconductance input stage, followed by quadrature passive mixers and transimpedance loading amplifiers. Measurement results show that the receiver achieves an input return loss below 8.5 dB across the 3.1–4.7 GHz frequency range, max-imum voltage conversion gain of 27 dB, minimum noise figure of 4 dB, IIP3 of –11.5 dBm, and IIP2 of 33 dBm. Working under 1.2 V supply voltage, the receiver consumes total current of 18 mA including 10 mA by on-chip quadrature LO signal generation and buffer circuits. The chip area with pads is 1.1 × 1.5 mm2.-
Keywords:
- UWB,
- direct-conversion receiver,
- low power,
- RF CMOS,
- passive mixer
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References
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