| Citation: |
Liu Biwei, Chen Shuming, Liang Bin. Temperature dependence of charge sharing and MBU sensitivity induced by a heavy ion[J]. Journal of Semiconductors, 2009, 30(7): 074005. doi: 10.1088/1674-4926/30/7/074005
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Liu B W, Chen S M, Liang B. Temperature dependence of charge sharing and MBU sensitivity induced by a heavy ion[J]. J. Semicond., 2009, 30(7): 074005. doi: 10.1088/1674-4926/30/7/074005.
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Temperature dependence of charge sharing and MBU sensitivity induced by a heavy ion
DOI: 10.1088/1674-4926/30/7/074005
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Abstract
The temperature dependence of charge sharing in a 130 nm CMOS technology has been investigated over a temperature range of 200 to 420 K. Device simulation results show that the charge sharing collection increases by 66%–325% when the temperature rises. The LETth of a MBU in two SRAM cells and one DICE cell is also quantified. Besides charge sharing, the circuit response's temperature dependence also has a significant influence on the LETth.-
Keywords:
- charge sharing
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References
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Proportional views
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