| Citation: |
Jiang Ran, Zhang Yan. Visible photoluminescence of porous silicon covered with an HfON dielectric layer[J]. Journal of Semiconductors, 2009, 30(8): 082003. doi: 10.1088/1674-4926/30/8/082003
****
Jiang R, Zhang Y. Visible photoluminescence of porous silicon covered with an HfON dielectric layer[J]. J. Semicond., 2009, 30(8): 082003. doi: 10.1088/1674-4926/30/8/082003.
|
Visible photoluminescence of porous silicon covered with an HfON dielectric layer
DOI: 10.1088/1674-4926/30/8/082003
-
Abstract
With HfON filling the holes in porous silicon (PS), films with improved photoluminescence (PL) at roomtemperature were prepared. A strong blue peak at 425 nm and a red peak at 690 nm were observed in PL spectra. It is believed that the quantum-limited effect (QLE) and the polycrystalline structure of HfON is responsible forthe observed PL peaks. The stoichiometric proportion of N/O in the HfON layer has also a great influence on theintensity of blue light emission. Finally, the temperature quenching effect was observed to be greatly weakened forthe incorporation of HfON.-
Keywords:
- hafnium oxynitride,
- dielectrics,
- diffusion,
- luminescence,
- porosity
-
References
-
Proportional views
DownLoad: