| Citation: |
Zhang Yan, Jiang Ran. Effect of annealing on characteristics of a HfOxNy–HfO2–HfOxNy sandwich stack compared with HfO2 film[J]. Journal of Semiconductors, 2009, 30(8): 082004. doi: 10.1088/1674-4926/30/8/082004
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Zhang Y, Jiang R. Effect of annealing on characteristics of a HfOxNy–HfO2–HfOxNy sandwich stack compared with HfO2 film[J]. J. Semicond., 2009, 30(8): 082004. doi: 10.1088/1674-4926/30/8/082004.
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Effect of annealing on characteristics of a HfOxNy–HfO2–HfOxNy sandwich stack compared with HfO2 film
DOI: 10.1088/1674-4926/30/8/082004
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Abstract
HfOxNy–HfO2–HfOxNy sandwich-stack (SS) film was investigated in comparison with HfO2 film ofthe same thickness. Higher thermal stability and better surface morphology can be observed for the SS film. Thisstructure also shows stronger immunity to interfacial oxidation compared with HfO2 film. Meanwhile, unlike theHfOxNy dielectric, the capacitance performance of SS film was not worse (but was even better) than a pure HfO2 film of the same thickness. The SS structure appears to be a promising high-k gate dielectric compared with bothpure HfOxNy and HfO2 dielectrics for future ULSI devices. Additionally, PDA treatment plays an important rolein improving the characteristics of SS film, which is confirmed by effective channel electron mobility and stressinduced leakage current (SILC) investigations.-
Keywords:
- hafnium oxynitride,
- dielectrics,
- diffusion,
- electrical properties,
- permittivity
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References
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Proportional views
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