J. Semicond. > 2009, Volume 30 > Issue 9 > 094006

SEMICONDUCTOR DEVICES

Active layer self-protection process for organic field-effect transistors

Liu Ge, Liu Ming, Shang Liwei, Tu Deyu, Liu Xinghua, Wang Hong and Liu Jiang

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DOI: 10.1088/1674-4926/30/9/094006

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Abstract: To isolate the active layer from air, double organic layer organic field-effect transistors have been fabricated, based on a two-step vacuum-deposition process. Pentacene acted as the active layer, and subsequently, CuPc was deposited above the pentacene and served as a protecting layer for the active layer. Due to the same electrical characteristics but different morphologies, the bilayer structure was effective in decreasing the contamination of impurities and gas, and then improved the device stability in air.

Key words: OFET pentacene CuPc stability

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    Received: 18 August 2015 Revised: 08 May 2009 Online: Published: 01 September 2009

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      Liu Ge, Liu Ming, Shang Liwei, Tu Deyu, Liu Xinghua, Wang Hong, Liu Jiang. Active layer self-protection process for organic field-effect transistors[J]. Journal of Semiconductors, 2009, 30(9): 094006. doi: 10.1088/1674-4926/30/9/094006 ****Liu G, Liu M, Shang L W, Tu D Y, Liu X H, Wang H, Liu J. Active layer self-protection process for organic field-effect transistors[J]. J. Semicond., 2009, 30(9): 094006. doi: 10.1088/1674-4926/30/9/094006.
      Citation:
      Liu Ge, Liu Ming, Shang Liwei, Tu Deyu, Liu Xinghua, Wang Hong, Liu Jiang. Active layer self-protection process for organic field-effect transistors[J]. Journal of Semiconductors, 2009, 30(9): 094006. doi: 10.1088/1674-4926/30/9/094006 ****
      Liu G, Liu M, Shang L W, Tu D Y, Liu X H, Wang H, Liu J. Active layer self-protection process for organic field-effect transistors[J]. J. Semicond., 2009, 30(9): 094006. doi: 10.1088/1674-4926/30/9/094006.

      Active layer self-protection process for organic field-effect transistors

      DOI: 10.1088/1674-4926/30/9/094006
      • Received Date: 2015-08-18
      • Accepted Date: 2008-09-13
      • Revised Date: 2009-05-08
      • Published Date: 2009-08-28

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