| Citation: |
Sun Yinghui, Zhang Bo, Yu Meifang, Liao Qingjun, Zhang Yan, Wen Xin, Jiang Peilu, Hu Xiaoning, Dai Ning. Crosstalk of HgCdTe LWIR n-on-p diode arrays[J]. Journal of Semiconductors, 2009, 30(9): 094007. doi: 10.1088/1674-4926/30/9/094007
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Sun Y H, Zhang B, Yu M F, Liao Q J, Zhang Y, Wen X, Jiang P L, Hu X N, Dai N. Crosstalk of HgCdTe LWIR n-on-p diode arrays[J]. J. Semicond., 2009, 30(9): 094007. doi: 10.1088/1674-4926/30/9/094007.
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Abstract
Crosstalk of HgCdTe long-wavelength infrared (LWIR) n-on-p diode arrays was measured using scanning laser microscopy. During the measurement, HgCdTe diode arrays with different diode pitches were frontside illuminated by a He–Ne laser at liquid nitrogen temperature and room temperature. The experimental results show that crosstalk between the nearest neighboring diodes decreases exponentially as the diode pitch increases, and the factors that affect the obtained crosstalk are presented and analyzed. Crosstalk out of the nominal diode area (optically sensitive area) is also measured and discussed.-
Keywords:
- crosstalk,
- HgCdTe,
- n-on-p diode arrays,
- scanning laser microscope
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References
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Proportional views
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