| Citation: |
Zhang Wei, Pan Jiaoqing, Zhu Hongliang, Wang Huan, Wang Wei. High-performance electroabsorption modulator[J]. Journal of Semiconductors, 2009, 30(9): 094008. doi: 10.1088/1674-4926/30/9/094008
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Zhang W, Pan J Q, Zhu H L, Wang H, Wang W. High-performance electroabsorption modulator[J]. J. Semicond., 2009, 30(9): 094008. doi: 10.1088/1674-4926/30/9/094008.
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Abstract
A 100- m-long electroabsorption modulator monolithically integrated with passive waveguides at the input and output ports is fabricated through ion implantation induced quantum well intermixing, using only a two-step low-pressure metal–organic vapor phase epitaxial process. An InGaAsP/InGaAsP intra-step quantum well is introduced to the active region to improve the modulation properties. In the experiment high modulation speed and high extinction ratio are obtained simultaneously, the electrical-to-optical frequency response (E/O response) without any load termination reaches to 22 GHz, and extinction ration is as high as 16 dB.-
Keywords:
- electroabsorption modulator
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