| Citation: |
Chen Chi, Hao Yue, Feng Hui, Yang Linan, Ma Xiaohua, Duan Huantao, Hu Shigang. An X-band GaN combined solid-state power amplifier[J]. Journal of Semiconductors, 2009, 30(9): 095001. doi: 10.1088/1674-4926/30/9/095001
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Chen C, Hao Y, Feng H, Yang L N, Ma X H, Duan H T, Hu S G. An X-band GaN combined solid-state power amplifier[J]. J. Semicond., 2009, 30(9): 095001. doi: 10.1088/1674-4926/30/9/095001.
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Abstract
Based on a self-developed AlGaN/GaN HEMT with 2.5 mm gate width technology on a SiC substrate, an X-band GaN combined solid-state power amplifier module is fabricated. The module consists of an AlGaN/GaN HEMT, Wilkinson power couplers, DC-bias circuit and microstrip line. For each amplifier, we use a bipolar DC power source. Special RC networks at the input and output and a resistor between the DC power source and the gate of the transistor at the input are used for cancellation of self-oscillation and crosstalk of low-frequency of each amplifier. At the same time, branches of length 3 /4 for Wilkinson power couplers are designed for the elimination of self-oscillation of the two amplifiers. Microstrip stub lines are used for input matching and output matching. Under Vds = 27 V, Vgs = –4.0 V, CWoperating conditions at 8 GHz, the amplifier module exhibits a line gain of 5.6 dB with power added efficiency of 23.4%, and output power of 41.46 dBm (14 W), and the power gain compression is 3 dB. Between 8 and 8.5 GHz, the variation of output power is less than 1.5 dB. -
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