Electroplated indium bump arrays and the bonding reliability

Huang Qiuping; Xu Gaowei; Quan Gang; Yuan Yuan; Luo Le

doi:10.1088/1674-4926/31/11/116004

J. Semicond. > 2010, Volume 31 > Issue 11 > 116004

SEMICONDUCTOR TECHNOLOGY

Electroplated indium bump arrays and the bonding reliability

Huang Qiuping, Xu Gaowei, Quan Gang, Yuan Yuan and Luo Le

+ Author Affiliations

DOI: 10.1088/1674-4926/31/11/116004

Abstract: A novel electroplating indium bumping process is described, as a result of which indium bump arrays with a pitch of 100 μm and a diameter of 40 μm were successfully prepared. UBM (under bump metallization) for indium bumping was investigated with an XRD technique. The experimental results indicate that Ti/Pt (300 Å / 200 Å) has an excellent barrier effect both at room temperature and at 200 ℃. The bonding reliability of the indium bumps was evaluated by a shear test. Results show that the shear strength of the indium bump significantly increases after the first reflow and then changes slowly with increasing reflow times. Such a phenomenon may be caused by the change in textures of the indium after reflow. The corresponding flip-chip process is also discussed in this paper.

Key words: bumping, under bump metallization, shear test, bonding reliability.

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Huang Qiuping, Xu Gaowei, Quan Gang, Yuan Yuan, Luo Le. Electroplated indium bump arrays and the bonding reliability[J]. Journal of Semiconductors, 2010, 31(11): 116004. doi: 10.1088/1674-4926/31/11/116004

Huang Q P, Xu G W, Quan G, Yuan Y, Luo L. Electroplated indium bump arrays and the bonding reliability[J]. J. Semicond., 2010, 31(11): 116004. doi: 10.1088/1674-4926/31/11/116004.

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Received: 18 August 2015 Revised: 29 June 2010 Online: Published: 01 November 2010

A novel electroplating indium bumping process is described, as a result of which indium bump arrays with a pitch of 100 μm and a diameter of 40 μm were successfully prepared. UBM (under bump metallization) for indium bumping was investigated with an XRD technique. The experimental results indicate that Ti/Pt (300 Å / 200 Å) has an excellent barrier effect both at room temperature and at 200 ℃. The bonding reliability of the indium bumps was evaluated by a shear test. Results show that the shear strength of the indium bump significantly increases after the first reflow and then changes slowly with increasing reflow times. Such a phenomenon may be caused by the change in textures of the indium after reflow. The corresponding flip-chip process is also discussed in this paper.

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