Modeling and experimental research on a removal mechanism during chemical mechanical polishing at the molecular scale

An Wei; Zhao Yongwu; Wang Yongguang

doi:10.1088/1674-4926/31/11/116005

J. Semicond. > 2010, Volume 31 > Issue 11 > 116005

SEMICONDUCTOR TECHNOLOGY

Modeling and experimental research on a removal mechanism during chemical mechanical polishing at the molecular scale

An Wei, Zhao Yongwu and Wang Yongguang

+ Author Affiliations

DOI: 10.1088/1674-4926/31/11/116005

Abstract: In order to understand the fundamentals of the chemical mechanical polishing (CMP) material removal mechanism, the indentation depth of a slurry particle into a wafer surface is determined using the in-situ nanomechanical testing system tribo-indenter by Hysitron. It was found that the removal mechanism in CMP is most probably a molecular scale removal theory. Furthermore, a comprehensive mathematical model was modified and used to pinpoint the effects of wafer/pad relative velocity, which has not been modeled previously. The predicted results based on the current model are shown to be consistent with the published experimental data. Results and analysis may lead to further understanding of the microscopic removal mechanism at the molecular scale in addition to its underlying theoretical foundation.

Key words: chemical mechanical polishing, model, molecular scale, experimental

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An Wei, Zhao Yongwu, Wang Yongguang. Modeling and experimental research on a removal mechanism during chemical mechanical polishing at the molecular scale[J]. Journal of Semiconductors, 2010, 31(11): 116005. doi: 10.1088/1674-4926/31/11/116005

An W, Zhao Y W, Wang Y G. Modeling and experimental research on a removal mechanism during chemical mechanical polishing at the molecular scale[J]. J. Semicond., 2010, 31(11): 116005. doi: 10.1088/1674-4926/31/11/116005.

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Received: 18 August 2015 Revised: 02 July 2010 Online: Published: 01 November 2010

In order to understand the fundamentals of the chemical mechanical polishing (CMP) material removal mechanism, the indentation depth of a slurry particle into a wafer surface is determined using the in-situ nanomechanical testing system tribo-indenter by Hysitron. It was found that the removal mechanism in CMP is most probably a molecular scale removal theory. Furthermore, a comprehensive mathematical model was modified and used to pinpoint the effects of wafer/pad relative velocity, which has not been modeled previously. The predicted results based on the current model are shown to be consistent with the published experimental data. Results and analysis may lead to further understanding of the microscopic removal mechanism at the molecular scale in addition to its underlying theoretical foundation.

Modeling and experimental research on a removal mechanism during chemical mechanical polishing at the molecular scale

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