Density-controllable nonvolatile memory devices having metal nanocrystals through chemical synthesis and assembled by spin-coating technique

Wang Guangli; Chen Yubin; Shi Yi; Pu Lin; Pan Lijia; Zhang Rong; Zheng Youdou

doi:10.1088/1674-4926/31/12/124011

J. Semicond. > 2010, Volume 31 > Issue 12 > 124011

SEMICONDUCTOR DEVICES

Density-controllable nonvolatile memory devices having metal nanocrystals through chemical synthesis and assembled by spin-coating technique

Wang Guangli, Chen Yubin, Shi Yi, Pu Lin, Pan Lijia, Zhang Rong and Zheng Youdou

+ Author Affiliations

School of Electronic Science and Technology and National Laboratory of Solid State Microstructures, Nanjing University, Nanjing 210093, China
School of Electronic Science and Technology and National Laboratory of Solid State Microstructures, Nanjing University, Nanjing 210093, China
School of Electronic Science and Technology and National Laboratory of Solid State Microstructures, Nanjing University, Nanjing 210093, China
School of Electronic Science and Technology and National Laboratory of Solid State Microstructures, Nanjing University, Nanjing 210093, China
School of Electronic Science and Technology and National Laboratory of Solid State Microstructures, Nanjing University, Nanjing 210093, China
School of Electronic Science and Technology and National Laboratory of Solid State Microstructures, Nanjing University, Nanjing 210093, China
School of Electronic Science and Technology and National Laboratory of Solid State Microstructures, Nanjing University, Nanjing 210093, China

DOI: 10.1088/1674-4926/31/12/124011

Abstract: A novel two-step method is employed, for the first time, to fabricate nonvolatile memory devices that have metal nanocrystals. First, size-averaged Au nanocrystals are synthesized chemically; second, they are assembled into memory devices by a spin-coating technique at room temperature. This attractive approach makes it possible to tailor the diameter and control the density of nanocrystals individually. In addition, processes at room temperature prevent Au diffusion, which is a main concern for the application of metal nanocrystal-based memory. The experimental results, both the morphology characterization and the electrical measurements, reveal that there is an optimum density of nanocrystal monolayer to balance between long data retention and a large hysteresis memory window. At the same time, density-controllable devices could also feed the preferential emphasis on either memory window or retention time. All these facts confirm the advantages and novelty of our two-step method.

Key words: metal nanocrystal

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Wang Guangli, Chen Yubin, Shi Yi, Pu Lin, Pan Lijia, Zhang Rong, Zheng Youdou. Density-controllable nonvolatile memory devices having metal nanocrystals through chemical synthesis and assembled by spin-coating technique[J]. Journal of Semiconductors, 2010, 31(12): 124011. doi: 10.1088/1674-4926/31/12/124011

Wang G L, Chen Y B, Shi Y, Pu L, Pan L J, Zhang R, Zheng Y D. Density-controllable nonvolatile memory devices having metal nanocrystals through chemical synthesis and assembled by spin-coating technique[J]. J. Semicond., 2010, 31(12): 124011. doi: 10.1088/1674-4926/31/12/124011.

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Received: 18 August 2015 Revised: 17 August 2010 Online: Published: 01 December 2010

A novel two-step method is employed, for the first time, to fabricate nonvolatile memory devices that have metal nanocrystals. First, size-averaged Au nanocrystals are synthesized chemically; second, they are assembled into memory devices by a spin-coating technique at room temperature. This attractive approach makes it possible to tailor the diameter and control the density of nanocrystals individually. In addition, processes at room temperature prevent Au diffusion, which is a main concern for the application of metal nanocrystal-based memory. The experimental results, both the morphology characterization and the electrical measurements, reveal that there is an optimum density of nanocrystal monolayer to balance between long data retention and a large hysteresis memory window. At the same time, density-controllable devices could also feed the preferential emphasis on either memory window or retention time. All these facts confirm the advantages and novelty of our two-step method.

Density-controllable nonvolatile memory devices having metal nanocrystals through chemical synthesis and assembled by spin-coating technique

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Density-controllable nonvolatile memory devices having metal nanocrystals through chemical synthesis and assembled by spin-coating technique

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