| Citation: |
Li Bing, Zhuang Yiqi, Li Zhenrong, Jin Gang. A 0.18 μm CMOS dual-band low power low noise amplifier for a global navigation satellite system[J]. Journal of Semiconductors, 2010, 31(12): 125001. doi: 10.1088/1674-4926/31/12/125001
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Li B, Zhuang Y Q, Li Z R, Jin G. A 0.18 μm CMOS dual-band low power low noise amplifier for a global navigation satellite system[J]. J. Semicond., 2010, 31(12): 125001. doi: 10.1088/1674-4926/31/12/125001.
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A 0.18 μm CMOS dual-band low power low noise amplifier for a global navigation satellite system
DOI: 10.1088/1674-4926/31/12/125001
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Abstract
This paper presents a dual-band low noise amplifier for the receiver of a global navigation satellite system. The differences between single band and multi-band design methods are discussed. The relevant parameter analysis and the details of circuit design are presented. The test chip was implemented in a TSMC 0.18 μm 1P4M RF CMOS process. The LNA achieves a gain of 16.8 dB/18.9 dB on 1.27 GHz/1.575 GHz. The measured noise figure is around 1.5–1.7dB on both bands. The LNA consumes less than 4.3 mA of current from a 1.8 V power supply. The measurement results show consistency with the design. And the LNA can fully satisfy the demands of the GNSS receiver.-
Keywords:
- CMOS low noise amplifier
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References
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Proportional views
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