| Citation: |
Sun Yan, Zhang Jiaxing, Zhang Minxuan, Hao Yue. Reducing vulnerability to soft errors in sub-100 nm content addressable memory circuits[J]. Journal of Semiconductors, 2010, 31(2): 025013. doi: 10.1088/1674-4926/31/2/025013
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Sun Y, Zhang J X, Zhang M X, Hao Y. Reducing vulnerability to soft errors in sub-100 nm content addressable memory circuits[J]. J. Semicond., 2010, 31(2): 025013. doi: 10.1088/1674-4926/31/2/025013.
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Reducing vulnerability to soft errors in sub-100 nm content addressable memory circuits
DOI: 10.1088/1674-4926/31/2/025013
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Abstract
We first study the impacts of soft errors on various types of CAM for different feature sizes. After presenting a soft error immune CAM cell, SSB-RCAM, we propose two kinds of reliable CAM, DCF-RCAM and DCK-RCAM. In addition, we present an ignore mechanism to protect dual cell redundancy CAMs against soft errors. Experimental results indicate that the 11T-NOR CAM cell has an advantage in soft error immunity. Based on 11T-NOR, the proposed reliable CAMs reduce the SER by about 81% on average with acceptable overheads. The SER of dual cell redundancy CAMs can also be decreased using the ignore mechanism in specific applications. -
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