SEMICONDUCTOR INTEGRATED CIRCUITS
Ma Wenlong, Shi Yin, Zhang Yaohui, Liu Hongbing and Xie Baojian
Abstract: The design and measurement of a snap-shot mode cryogenic readout circuit (ROIC) for GaAs/AlGaAs QWIP FPAs was reported. CTIA input circuits with pixel level built-in electronic injection transistors were proposed to test the chip before assembly with a detector array. Design optimization techniques for cryogenic and low power are analyzed. An experimental ROIC chip of a 128×128 array was fabricated in 0.35μm CMOS technology. Measurements showed that the ROIC could operate at 77 K with low power dissipation of 35 mW. The chip has a pixel charge capacity of 2.57E6 electrons and transimpedance of 1.4E7 electrons. Measurements showed that the transimpedance non-uniformity was less than 5% with a 10 MHz readout speed and a 3.3 V supply voltage.
Key words: QWIP
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Received: 18 August 2015 Revised: 24 September 2009 Online: Published: 01 February 2010
| Citation: |
Ma Wenlong, Shi Yin, Zhang Yaohui, Liu Hongbing, Xie Baojian. A snap-shot mode cryogenic readout circuit for QWIP IR FPAs[J]. Journal of Semiconductors, 2010, 31(2): 025012. doi: 10.1088/1674-4926/31/2/025012
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Ma W L, Shi Y, Zhang Y H, Liu H B, Xie B J. A snap-shot mode cryogenic readout circuit for QWIP IR FPAs[J]. J. Semicond., 2010, 31(2): 025012. doi: 10.1088/1674-4926/31/2/025012.
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