| Citation: |
Shang Haiping, Xu Qiuxia. SBH adjustment characteristic of the dopant segregation process for NiSi/n-Si SJDs[J]. Journal of Semiconductors, 2010, 31(5): 056001. doi: 10.1088/1674-4926/31/5/056001
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Shang H P, Xu Q X. SBH adjustment characteristic of the dopant segregation process for NiSi/n-Si SJDs[J]. J. Semicond., 2010, 31(5): 056001. doi: 10.1088/1674-4926/31/5/056001.
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SBH adjustment characteristic of the dopant segregation process for NiSi/n-Si SJDs
DOI: 10.1088/1674-4926/31/5/056001
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Abstract
Bymeans of analyzing the I–V characteristic curve of NiSi/n-Si Schottky junction diodes (NiSi/n-Si SJDs), abstracting the effective Schottky barrier height (φB, eff) and the ideal factor of NiSi/n-Si SJDs and measuring the sheet resistance of NiSi films (RNiSi), we study the effects of different dopant segregation process parameters, including impurity implantation dose, segregation annealing temperature and segregation annealing time, on theφB, eff of NiSi/n-Si SJDs and the resistance characteristic of NiSi films. In addition, the changing rules of φB, eff and RNiSi are discussed. -
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