J. Semicond. > 2010, Volume 31 > Issue 6 > 064004
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SEMICONDUCTOR DEVICES

Conductivity modulation enhanced lateral IGBT with SiO2 shielded layer anode by SIMOX technology on SOI substrate

Chen Wensuo, Zhang Bo, Li Zhaoji, Fang Jian and Guan Xu

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DOI: 10.1088/1674-4926/31/6/064004

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Abstract: A new lateral insulated-gate bipolar transistor (LIGBT) with a SiO2 shielded layer anode on SOI substrate is proposed and discussed. Compared to the conventional LIGBT, the proposed device offers an enhanced conductivity modulation effect due to the SiO2 shielded layer anode structure which can be formed by SIMOX technology. Simulation results show that, for the proposed LIGBT, during the conducting state, the electron–hole plasma concentrations in the n-drift region are several times larger than those of the conventional LIGBT; the conducting current is up to 37% larger than that of the conventional one. The enhanced conductivity modulation effect by SiO2 shielded layer anode does not sacrifice other characteristics of the device, such as breakdown and switching, but is compatible with other optimized technologies.

Key words: enhanced conductivity modulation effect,  shielded anode,  SIMOX technology

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    Received: 18 August 2015 Revised: 28 January 2010 Online: Published: 01 June 2010

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      Article Navigation >  Journal of Semiconductors  > 2010  >  31(6): 064004
      Chen Wensuo, Zhang Bo, Li Zhaoji, Fang Jian, Guan Xu. Conductivity modulation enhanced lateral IGBT with SiO2 shielded layer anode by SIMOX technology on SOI substrate[J]. Journal of Semiconductors, 2010, 31(6): 064004. doi: 10.1088/1674-4926/31/6/064004 ****Chen W S, Zhang B, Li Z J, Fang J, Guan X. Conductivity modulation enhanced lateral IGBT with SiO2 shielded layer anode by SIMOX technology on SOI substrate[J]. J. Semicond., 2010, 31(6): 064004. doi: 10.1088/1674-4926/31/6/064004.
      Citation:
      Chen Wensuo, Zhang Bo, Li Zhaoji, Fang Jian, Guan Xu. Conductivity modulation enhanced lateral IGBT with SiO2 shielded layer anode by SIMOX technology on SOI substrate[J]. Journal of Semiconductors, 2010, 31(6): 064004. doi: 10.1088/1674-4926/31/6/064004 ****
      Chen W S, Zhang B, Li Z J, Fang J, Guan X. Conductivity modulation enhanced lateral IGBT with SiO2 shielded layer anode by SIMOX technology on SOI substrate[J]. J. Semicond., 2010, 31(6): 064004. doi: 10.1088/1674-4926/31/6/064004.
      shu

      Conductivity modulation enhanced lateral IGBT with SiO2 shielded layer anode by SIMOX technology on SOI substrate

      DOI: 10.1088/1674-4926/31/6/064004

      • State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic science and Technology of China, Chengdu 610054, China

      • State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic science and Technology of China, Chengdu 610054, China

      • State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic science and Technology of China, Chengdu 610054, China

      • State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic science and Technology of China, Chengdu 610054, China

      • State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic science and Technology of China, Chengdu 610054, China

      • Received Date: 2015-08-18
      • Accepted Date: 2009-12-17
      • Revised Date: 2010-01-28
      • Published Date: 2010-06-03

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