SEMICONDUCTOR INTEGRATED CIRCUITS
Chen Gaopeng, Wu Danyu, Jin Zhi and Liu Xinyu
Abstract: This paper presents a 10-GHz 8-bit direct digital synthesizer (DDS) microwave monolithic integrated circuit implemented in 1 μm GaAs HBT technology. The DDS takes a double-edge-trigger (DET) 8-stage pipeline accumulator with sine-weighted DAC-based ROM-less architecture, which can maximize the utilization ratio of the GaAs HBT’s high-speed potential. With an output frequency up to 5 GHz, the DDS gives an average spurious free dynamic range of 23.24 dBc through the first Nyquist band, and consumes 2.4 W of DC power from a single –4.6 V DC supply. Using 1651 GaAs HBT transistors, the total area of the DDS chip is 2.4×2.0 mm2.
Key words: DDS, double-edge-trigger, CML, ECL, GaAs HBT, sine-weighted DAC
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Received: 18 August 2015 Revised: 28 January 2010 Online: Published: 01 June 2010
| Citation: |
Chen Gaopeng, Wu Danyu, Jin Zhi, Liu Xinyu. An ultra-high-speed direct digital frequency synthesizer implemented in GaAs HBT technology[J]. Journal of Semiconductors, 2010, 31(6): 065002. doi: 10.1088/1674-4926/31/6/065002
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Chen G P, Wu D Y, Jin Z, Liu X Y. An ultra-high-speed direct digital frequency synthesizer implemented in GaAs HBT technology[J]. J. Semicond., 2010, 31(6): 065002. doi: 10.1088/1674-4926/31/6/065002.
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