| Citation: |
Zheng Renliang, Jiang Xudong, Yao Wang, Yang Guang, Yin Jiangwei, Zheng Jianqin, Ren Junyan, Li Wei, Li Ning. A monolithic 3.1–4.8 GHz MB-OFDM UWB transceiver in 0.18-μm CMOS[J]. Journal of Semiconductors, 2010, 31(6): 065007. doi: 10.1088/1674-4926/31/6/065007
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Zheng R L, Jiang X D, Yao W, Yang G, Yin J W, Zheng J Q, Ren J Y, Li W, Li N. A monolithic 3.1–4.8 GHz MB-OFDM UWB transceiver in 0.18-μm CMOS[J]. J. Semicond., 2010, 31(6): 065007. doi: 10.1088/1674-4926/31/6/065007.
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Abstract
A monolithic RF transceiver for an MB-OFDM UWB system in 3.1–4.8 GHz is presented. The transceiver adopts direct-conversion architecture and integrates all building blocks including a gain controllable wideband LNA, a I/Q merged quadrature mixer, a fifth-order Gm–C bi-quad Chebyshev LPF/VGA, a fast-settling frequency synthesizer with a poly-phase filter, a linear broadband up-conversion quadrature modulator, an active D2S converter and a variablegain power amplifier. The ESD protected transceiver is fabricated in Jazz Semiconductor’s 0.18-μm RF CMOS with an area of 6.1 mm2 and draws a total current of 221 mA from 1.8-V supply. The receiver achieves a maximum voltage gain of 68 dB with a control range of 42 dB in 6 dB/step, noise figures of 5.5–8.8 dB for three sub-bands, and an inband/out-band IIP3 better than -4 dBm/+9 dBm. The transmitter achieves an output power ranging from -10.7 to -3 dBm with gain control, an output P1dB better than -7.7 dBm, a sideband rejection about 32.4 dBc, and LO suppression of 31.1 dBc. The hopping time among sub-bands is less than 2.05 ns.-
Keywords:
- MB-OFDM
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References
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Proportional views
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