Rotary traveling-wave oscillator design using 0.18 μm CMOS

Hu Xinyi; Dai Yayue; Zhang Huafeng; Zhou Jinfang; Chen Kangsheng

doi:10.1088/1674-4926/31/6/065009

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Hu Xinyi, Dai Yayue, Zhang Huafeng, Zhou Jinfang, Chen Kangsheng. Rotary traveling-wave oscillator design using 0.18 μm CMOS[J]. Journal of Semiconductors, 2010, 31(6): 065009. doi: 10.1088/1674-4926/31/6/065009 ****Hu X Y, Dai Y Y, Zhang H F, Zhou J F, Chen K S. Rotary traveling-wave oscillator design using 0.18 μm CMOS[J]. J. Semicond., 2010, 31(6): 065009. doi: 10.1088/1674-4926/31/6/065009.

Citation:

Hu Xinyi, Dai Yayue, Zhang Huafeng, Zhou Jinfang, Chen Kangsheng. Rotary traveling-wave oscillator design using 0.18 μm CMOS[J]. Journal of Semiconductors, 2010, 31(6): 065009. doi: 10.1088/1674-4926/31/6/065009 ****

Hu X Y, Dai Y Y, Zhang H F, Zhou J F, Chen K S. Rotary traveling-wave oscillator design using 0.18 μm CMOS[J]. J. Semicond., 2010, 31(6): 065009. doi: 10.1088/1674-4926/31/6/065009.

Citation:

Hu X Y, Dai Y Y, Zhang H F, Zhou J F, Chen K S. Rotary traveling-wave oscillator design using 0.18 μm CMOS[J]. J. Semicond., 2010, 31(6): 065009. doi: 10.1088/1674-4926/31/6/065009.

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Rotary traveling-wave oscillator design using 0.18 μm CMOS

DOI: 10.1088/1674-4926/31/6/065009

Department of Information Science and Electronic Engineering, Zhejiang University, Hangzhou 310027, China
Department of Information Science and Electronic Engineering, Zhejiang University, Hangzhou 310027, China
Department of Information Science and Electronic Engineering, Zhejiang University, Hangzhou 310027, China
Department of Information Science and Electronic Engineering, Zhejiang University, Hangzhou 310027, China
Department of Information Science and Electronic Engineering, Zhejiang University, Hangzhou 310027, China

Received Date: 2015-08-18
Accepted Date: 2009-05-08
Revised Date: 2010-02-06
Published Date: 2010-06-03

Abstract

Abstract

A rotary traveling-wave oscillator (RTWO) targeted at 5.8 GHz band operation is designed and fabricated using standard 0.18 μm CMOS technology. Both simulation and measurement results are presented. The chip size including pads is 1.5×1.5 mm2. The measured output power at a frequency of 5.285 GHz is 6.68 dBm, with a phase noise of –102 dBc/Hz at 1 MHz offset from the carrier.
- rotary traveling-wave oscillators,
- multiphase oscillators,
- CMOS

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Rotary traveling-wave oscillator design using 0.18 μm CMOS

DOI: 10.1088/1674-4926/31/6/065009

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Rotary traveling-wave oscillator design using 0.18 μm CMOS

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Rotary traveling-wave oscillator design using 0.18 μm CMOS

DOI: 10.1088/1674-4926/31/6/065009

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