Monolithic integration of widely tunable sampled grating DBR laser with tilted semiconductor optical amplifier

Liu Yang; Ye Nan; Wang Baojun; Zhou Daibing; An Xin; Bian Jing; Pan Jiaoqing; Zhao Lingjuan; Wang Wei

doi:10.1088/1674-4926/31/7/074003

Article Navigation > Journal of Semiconductors > 2010 > 31(7): 074003

Liu Yang, Ye Nan, Wang Baojun, Zhou Daibing, An Xin, Bian Jing, Pan Jiaoqing, Zhao Lingjuan, Wang Wei. Monolithic integration of widely tunable sampled grating DBR laser with tilted semiconductor optical amplifier[J]. Journal of Semiconductors, 2010, 31(7): 074003. doi: 10.1088/1674-4926/31/7/074003 ****Liu Y, Ye N, Wang B J, Zhou D B, An X, Bian J, Pan J Q, Zhao L J, Wang W. Monolithic integration of widely tunable sampled grating DBR laser with tilted semiconductor optical amplifier[J]. J. Semicond., 2010, 31(7): 074003. doi: 10.1088/1674-4926/31/7/074003.

Citation:

Liu Y, Ye N, Wang B J, Zhou D B, An X, Bian J, Pan J Q, Zhao L J, Wang W. Monolithic integration of widely tunable sampled grating DBR laser with tilted semiconductor optical amplifier[J]. J. Semicond., 2010, 31(7): 074003. doi: 10.1088/1674-4926/31/7/074003.

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Monolithic integration of widely tunable sampled grating DBR laser with tilted semiconductor optical amplifier

DOI: 10.1088/1674-4926/31/7/074003

Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China

Received Date: 2015-08-18
Accepted Date: 2010-01-11
Revised Date: 2010-02-05
Published Date: 2010-07-05

Abstract

Abstract

High output powers and wide range tuning have been achieved in a sampled grating distributed Bragg reflector laser with an integrated semiconductor optical amplifier. Tilted amplifier and anti-reflection facet coating are used to suppress reflection. We have demonstrated sampled grating DBR laser with a tuning range over 38 nm, good wavelength coverage and peak output powers of more than 9 mW for all wavelengths.
- sampled grating,
- DBR lasers,
- integration,
- SOA

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Monolithic integration of widely tunable sampled grating DBR laser with tilted semiconductor optical amplifier

DOI: 10.1088/1674-4926/31/7/074003

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Monolithic integration of widely tunable sampled grating DBR laser with tilted semiconductor optical amplifier

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