Photoelectrochemical etching of uniform macropore array on full 5-inch silicon wafers

Zhao Zhigang; Guo Jinchuan; Lei Yaohu; Niu Hanben

doi:10.1088/1674-4926/31/7/076001

Article Navigation > Journal of Semiconductors > 2010 > 31(7): 076001

Zhao Zhigang, Guo Jinchuan, Lei Yaohu, Niu Hanben. Photoelectrochemical etching of uniform macropore array on full 5-inch silicon wafers[J]. Journal of Semiconductors, 2010, 31(7): 076001. doi: 10.1088/1674-4926/31/7/076001 ****Zhao Z G, Guo J C, Lei Y H, Niu H B. Photoelectrochemical etching of uniform macropore array on full 5-inch silicon wafers[J]. J. Semicond., 2010, 31(7): 076001. doi: 10.1088/1674-4926/31/7/076001.

Citation:

Zhao Zhigang, Guo Jinchuan, Lei Yaohu, Niu Hanben. Photoelectrochemical etching of uniform macropore array on full 5-inch silicon wafers[J]. Journal of Semiconductors, 2010, 31(7): 076001. doi: 10.1088/1674-4926/31/7/076001 ****

Zhao Z G, Guo J C, Lei Y H, Niu H B. Photoelectrochemical etching of uniform macropore array on full 5-inch silicon wafers[J]. J. Semicond., 2010, 31(7): 076001. doi: 10.1088/1674-4926/31/7/076001.

Citation:

Zhao Z G, Guo J C, Lei Y H, Niu H B. Photoelectrochemical etching of uniform macropore array on full 5-inch silicon wafers[J]. J. Semicond., 2010, 31(7): 076001. doi: 10.1088/1674-4926/31/7/076001.

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Photoelectrochemical etching of uniform macropore array on full 5-inch silicon wafers

DOI: 10.1088/1674-4926/31/7/076001

Institute of Optoelectronics Engineering, Shenzhen University, Shenzhen 518060, China
Institute of Optoelectronics Science and Engineering, Huazhong University of Science and Technology, Wuhan 430074, China
Institute of Optoelectronics Engineering, Shenzhen University, Shenzhen 518060, China
Institute of Optoelectronics Engineering, Shenzhen University, Shenzhen 518060, China
Institute of Optoelectronics Engineering, Shenzhen University, Shenzhen 518060, China

Received Date: 2015-08-18
Accepted Date: 2010-01-21
Revised Date: 2010-02-23
Published Date: 2010-07-05

Abstract

Abstract

We analyze the two main factors causing non-uniformity of the etched macropore array first, and then a novel photoelectrochemical etching setup for large area silicon wafers is described. This etching setup refined typical etching setups by a water cooling system and a shower-head shaped electrolyte circulator. Experimental results showed that the uniform macropore array on full 5-inch n-type silicon wafers could be fabricated by this etching setup. The morphology of the macropore array can be controlled by adjusting the corresponding etching parameters.
- photoelectrochemical etching,
- macropore array,
- large area,
- non-uniformity,
- current density

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Photoelectrochemical etching of uniform macropore array on full 5-inch silicon wafers

DOI: 10.1088/1674-4926/31/7/076001

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Photoelectrochemical etching of uniform macropore array on full 5-inch silicon wafers

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