A new cleaning process combining non-ionic surfactant with diamond film electrochemical oxidation for polished silicon wafers

Gao Baohong; Zhu Yadong; Liu Yuling; Wang Shengli; Zhou Qiang; Liu Xiaoyan

doi:10.1088/1674-4926/31/7/076002

J. Semicond. > 2010, Volume 31 > Issue 7 > 076002

SEMICONDUCTOR TECHNOLOGY

A new cleaning process combining non-ionic surfactant with diamond film electrochemical oxidation for polished silicon wafers

Gao Baohong, Zhu Yadong, Liu Yuling, Wang Shengli, Zhou Qiang and Liu Xiaoyan

+ Author Affiliations

DOI: 10.1088/1674-4926/31/7/076002

Abstract: This paper presents a new cleaning process for particle and organic contaminants on polished silicon wafer surfaces. It combines a non-ionic surfactant with boron-doped diamond (BDD) film anode electrochemical oxidation. The non-ionic surfactant is used to remove particles on the polished wafer's surface, because it can form a protective film on the surface, which makes particles easy to remove. The effects of particle removal comparative experiments were observed by metallographic microscopy, which showed that the 1% v/v non-ionic surfactant achieved the best result. However, the surfactant film itself belongs to organic contamination, and it eventually needs to be removed. BDD film anode electrochemical oxidation (BDD-EO) is used to remove organic contaminants, because it can efficiently degrade organic matter. Three organic contaminant removal comparative experiments were carried out: the first one used the non-ionic surfactant in the first step and then used BDD-EO, the second one used BDD-EO only, and the last one used RCA cleaning technique. The XPS measurement result shows that the wafer's surface cleaned by BDD-EO has much less organic residue than that cleaned by RCA cleaning technique, and the non-ionic surfactant can be efficiently removed by BDD-EO.

Key words: non-ionic surfactant

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Gao Baohong, Zhu Yadong, Liu Yuling, Wang Shengli, Zhou Qiang, Liu Xiaoyan. A new cleaning process combining non-ionic surfactant with diamond film electrochemical oxidation for polished silicon wafers[J]. Journal of Semiconductors, 2010, 31(7): 076002. doi: 10.1088/1674-4926/31/7/076002

Gao B H, Zhu Y D, Liu Y L, Wang S L, Zhou Q, Liu X Y. A new cleaning process combining non-ionic surfactant with diamond film electrochemical oxidation for polished silicon wafers[J]. J. Semicond., 2010, 31(7): 076002. doi: 10.1088/1674-4926/31/7/076002.

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Received: 18 August 2015 Revised: 05 April 2010 Online: Published: 01 July 2010

This paper presents a new cleaning process for particle and organic contaminants on polished silicon wafer surfaces. It combines a non-ionic surfactant with boron-doped diamond (BDD) film anode electrochemical oxidation. The non-ionic surfactant is used to remove particles on the polished wafer's surface, because it can form a protective film on the surface, which makes particles easy to remove. The effects of particle removal comparative experiments were observed by metallographic microscopy, which showed that the 1% v/v non-ionic surfactant achieved the best result. However, the surfactant film itself belongs to organic contamination, and it eventually needs to be removed. BDD film anode electrochemical oxidation (BDD-EO) is used to remove organic contaminants, because it can efficiently degrade organic matter. Three organic contaminant removal comparative experiments were carried out: the first one used the non-ionic surfactant in the first step and then used BDD-EO, the second one used BDD-EO only, and the last one used RCA cleaning technique. The XPS measurement result shows that the wafer's surface cleaned by BDD-EO has much less organic residue than that cleaned by RCA cleaning technique, and the non-ionic surfactant can be efficiently removed by BDD-EO.

A new cleaning process combining non-ionic surfactant with diamond film electrochemical oxidation for polished silicon wafers

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