J. Semicond. > 2011, Volume 32 > Issue 1 > 013003
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SEMICONDUCTOR MATERIALS

Criteria for versatile GaN MOVPE tool: high growth rate GaN by atmosphericpressure growth

Koh Matsumoto, Kazutada Ikenaga, Jun Yamamoto, Kazuki Naito, Yoshiki Yano, Akinori Ubukata, Hiroki Tokunaga, Tadanobu Arimura, Katsuaki Cho, Toshiya Tabuchi, Akira Yamaguchi, Yasuhiro Harada, Yuzaburo Ban and Kousuke Uchiyama

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DOI: 10.1088/1674-4926/32/1/013003

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Abstract: Growth rate has a direct impact on the productivity of nitride LED production. Atmospheric pressure growth of GaN with a growth rate as high as 10 μm/h and also Al0.1Ga0.9N growth of 1 μm/h by using 4 inch by 11 production scale MOVPE are described. XRD of (002) and (102) direction was 200 arcsec and 250 arcsec, respectively. Impact of the growth rate on productivity is discussed.

Key words: MOVPE, GaN: AlGaN, atmospheric pressure growth, high growth rate

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    Received: 18 August 2015 Revised: Online: Published: 01 January 2011

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      Article Navigation >  Journal of Semiconductors  > 2011  >  32(1): 013003
      Koh Matsumoto, Kazutada Ikenaga, Jun Yamamoto, Kazuki Naito, Yoshiki Yano, Akinori Ubukata, Hiroki Tokunaga, Tadanobu Arimura, Katsuaki Cho, Toshiya Tabuchi, Akira Yamaguchi, Yasuhiro Harada, Yuzaburo Ban, Kousuke Uchiyama. Criteria for versatile GaN MOVPE tool: high growth rate GaN by atmosphericpressure growth[J]. Journal of Semiconductors, 2011, 32(1): 013003. doi: 10.1088/1674-4926/32/1/013003 ****K Matsumoto, K Ikenaga, J Yamamoto, K Naito, Y Yano, A Ubukata, H Tokunaga, T Arimura, K Cho, T Tabuchi, A Yamaguchi, Y Harada, Y Ban, K Uchiyama. Criteria for versatile GaN MOVPE tool: high growth rate GaN by atmosphericpressure growth[J]. J. Semicond., 2011, 32(1): 013003. doi:  10.1088/1674-4926/32/1/013003.
      Citation:
      Koh Matsumoto, Kazutada Ikenaga, Jun Yamamoto, Kazuki Naito, Yoshiki Yano, Akinori Ubukata, Hiroki Tokunaga, Tadanobu Arimura, Katsuaki Cho, Toshiya Tabuchi, Akira Yamaguchi, Yasuhiro Harada, Yuzaburo Ban, Kousuke Uchiyama. Criteria for versatile GaN MOVPE tool: high growth rate GaN by atmosphericpressure growth[J]. Journal of Semiconductors, 2011, 32(1): 013003. doi: 10.1088/1674-4926/32/1/013003 ****
      K Matsumoto, K Ikenaga, J Yamamoto, K Naito, Y Yano, A Ubukata, H Tokunaga, T Arimura, K Cho, T Tabuchi, A Yamaguchi, Y Harada, Y Ban, K Uchiyama. Criteria for versatile GaN MOVPE tool: high growth rate GaN by atmosphericpressure growth[J]. J. Semicond., 2011, 32(1): 013003. doi:  10.1088/1674-4926/32/1/013003.
      shu

      Criteria for versatile GaN MOVPE tool: high growth rate GaN by atmosphericpressure growth

      DOI: 10.1088/1674-4926/32/1/013003

      • TN-EMC Ltd, 2008-2 Wada, Tama, Tokyo 206-0001, Japan

      • Business Strategy Planning div. Electronics Group, TAIYO NIPPON SANSO Corporation, 10 Okubo, Tsukuba 300-2611, Japan

      • TN-EMC Ltd, 2008-2 Wada, Tama, Tokyo 206-0001, Japan

      • Business Strategy Planning div. Electronics Group, TAIYO NIPPON SANSO Corporation, 10 Okubo, Tsukuba 300-2611, Japan

      • Business Strategy Planning div. Electronics Group, TAIYO NIPPON SANSO Corporation, 10 Okubo, Tsukuba 300-2611, Japan

      • Business Strategy Planning div. Electronics Group, TAIYO NIPPON SANSO Corporation, 10 Okubo, Tsukuba 300-2611, Japan

      • Business Strategy Planning div. Electronics Group, TAIYO NIPPON SANSO Corporation, 10 Okubo, Tsukuba 300-2611, Japan

      • Business Strategy Planning div. Electronics Group, TAIYO NIPPON SANSO Corporation, 10 Okubo, Tsukuba 300-2611, Japan

      • Business Strategy Planning div. Electronics Group, TAIYO NIPPON SANSO Corporation, 10 Okubo, Tsukuba 300-2611, Japan

      • Business Strategy Planning div. Electronics Group, TAIYO NIPPON SANSO Corporation, 10 Okubo, Tsukuba 300-2611, Japan

      • Compound-semiconductor Division, TAIYO NIPPON SANSO Corp., 6-2 Kojimacho, Kawasaki-shi, 210-0861, Japan

      • TN-EMC Ltd, 2008-2 Wada, Tama, Tokyo 206-0001, Japan

      • TN-EMC Ltd, 2008-2 Wada, Tama, Tokyo 206-0001, Japan

      • TN-EMC Ltd, 2008-2 Wada, Tama, Tokyo 206-0001, Japan

      • Received Date: 2015-08-18

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