| Citation: |
Satoshi Kamiyama, Motoaki Iwaya, Tetsuya Takeuchi, Isamu Akasaki, Mikael Syvajarvi, Rositza Yakimova. Fluorescent SiC and its application to white light-emitting diodes[J]. Journal of Semiconductors, 2011, 32(1): 013004. doi: 10.1088/1674-4926/32/1/013004
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S Kamiyama, M Iwaya, T Takeuchi, I Akasaki, M Syvajarvi, R Yakimova. Fluorescent SiC and its application to white light-emitting diodes[J]. J. Semicond., 2011, 32(1): 013004. doi: 10.1088/1674-4926/32/1/013004.
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Fluorescent SiC and its application to white light-emitting diodes
DOI: 10.1088/1674-4926/32/1/013004
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Abstract
Fluorescent-SiC (f-SiC), which contains donor and acceptor impurities with optimum concentrations, has high conversion efficiency from NUV to visible light caused by donor-acceptor-pair (DAP) recombination. This material can be used as a substrate for a near UV light-emitting diode (LED) stack, and leads to monolithic white LED device with suitable spectral property for general lighting applications. In this paper, we describe basic technologies of the white LED, such as optical properties of f-SiC substrate, and epitaxial growth of NUV stack on the f-SiC substrate.-
Keywords:
- white LED,
- phosphor,
- SiC,
- donor-acceptor-pair,
- GaN,
- general lighting
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References
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Proportional views
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