Response time improvement of AlGaN photoconductive detectors by adjusting crystal-nuclei coalescence process in metal organic vapor phase epitaxy

Wang Lai; Hao Zhibiao; Han Yanjun; Luo Yi; Wang Lanxi; Chen Xuekang

doi:10.1088/1674-4926/32/1/014013

Article Navigation > Journal of Semiconductors > 2011 > 32(1): 014013

Wang Lai, Hao Zhibiao, Han Yanjun, Luo Yi, Wang Lanxi, Chen Xuekang. Response time improvement of AlGaN photoconductive detectors by adjusting crystal-nuclei coalescence process in metal organic vapor phase epitaxy[J]. Journal of Semiconductors, 2011, 32(1): 014013. doi: 10.1088/1674-4926/32/1/014013 ****Wang L, Hao Z B, Han Y J, Luo Y, Wang L X, Chen X K. Response time improvement of AlGaN photoconductive detectors by adjusting crystal-nuclei coalescence process in metal organic vapor phase epitaxy[J]. J. Semicond., 2011, 32(1): 014013. doi: 10.1088/1674-4926/32/1/014013.

Citation:

Wang L, Hao Z B, Han Y J, Luo Y, Wang L X, Chen X K. Response time improvement of AlGaN photoconductive detectors by adjusting crystal-nuclei coalescence process in metal organic vapor phase epitaxy[J]. J. Semicond., 2011, 32(1): 014013. doi: 10.1088/1674-4926/32/1/014013.

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Response time improvement of AlGaN photoconductive detectors by adjusting crystal-nuclei coalescence process in metal organic vapor phase epitaxy

DOI: 10.1088/1674-4926/32/1/014013

Tsinghua National Laboratory for Information Science and Technology, State Key Laboratory on Integrated Optoelectronics, Department of Electronic Engineering, Tsinghua University, Beijing 100084, China
Tsinghua National Laboratory for Information Science and Technology, State Key Laboratory on Integrated Optoelectronics, Department of Electronic Engineering, Tsinghua University, Beijing 100084, China
Tsinghua National Laboratory for Information Science and Technology, State Key Laboratory on Integrated Optoelectronics, Department of Electronic Engineering, Tsinghua University, Beijing 100084, China
Tsinghua National Laboratory for Information Science and Technology, State Key Laboratory on Integrated Optoelectronics, Department of Electronic Engineering, Tsinghua University, Beijing 100084, China
National Key Laboratory for Surface Engineering, Lanzhou Institute of Physics, Lanzhou 730000, China
National Key Laboratory for Surface Engineering, Lanzhou Institute of Physics, Lanzhou 730000, China

Received Date: 2015-08-18
Accepted Date: 2010-06-08
Revised Date: 2010-08-30
Published Date: 2010-12-19

Abstract

Abstract

AlGaN photoconductive ultraviolet detectors are fabricated to study their time response characteristics. Persistent photoconductivity, a deterring factor for the detector response time, is found to be strongly related to the grain boundary density in AlGaN epilayers. By improving the crystal-nuclei coalescence process in metal organic vapor phase epitaxy, the grain-boundary density can be reduced, resulting in an-order-of-magnitude decrease in response time.
- metal organic vapor phase epitaxy

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Response time improvement of AlGaN photoconductive detectors by adjusting crystal-nuclei coalescence process in metal organic vapor phase epitaxy

DOI: 10.1088/1674-4926/32/1/014013

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Response time improvement of AlGaN photoconductive detectors by adjusting crystal-nuclei coalescence process in metal organic vapor phase epitaxy

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