| Citation: |
Wang Yuanzhang, Li Jinchai, Li Shuping, Chen Hangyang, Liu Dayi, Kang Junyong. X-ray reflectivity and atomic force microscopy studies of MOCVD grown AlxGa1-xN/GaN superlattice structures[J]. Journal of Semiconductors, 2011, 32(4): 043006. doi: 10.1088/1674-4926/32/4/043006
****
Wang Y Z, Li J C, Li S P, Chen H Y, Liu D Y, Kang J Y. X-ray reflectivity and atomic force microscopy studies of MOCVD grown AlxGa1-xN/GaN superlattice structures[J]. J. Semicond., 2011, 32(4): 043006. doi: 10.1088/1674-4926/32/4/043006.
|
X-ray reflectivity and atomic force microscopy studies of MOCVD grown AlxGa1-xN/GaN superlattice structures
DOI: 10.1088/1674-4926/32/4/043006
-
Abstract
The grazing incidence X-ray reflectivity (GIXR) technique and atomic force microscopy (AFM) were exploited to obtain an accurate evaluation of the surfaces and interfaces for metalorganic chemical vapor deposition grown AlxGa1-xN/GaN superlattice structures. The X-ray diffraction results have been combined with reflectivity data to evaluate the layer thickness and Al mole fraction in the AlGaN layer. The presence of a smooth interface is responsible for the observation of intensity oscillation in GIXR, which is well correlated to step flow observation in AFM images of the surface. The structure with a low Al mole fraction (x=0.25) and thin well width has a rather smooth surface for the Rrms of AFM data value is 0.45 nm. -
References
-
Proportional views
DownLoad: