Abstract: This paper reports on the fabrication and investigation of a surface-type organic semiconductor copper phthalocyanine (CuPc) based diode. A thin film of CuPc of thickness 100 nm was thermally sublimed onto a glass substrate with preliminary deposited metallic electrodes to form a surface-type Ag/CuPc/Au Schottky diode. The current–voltage characteristics were measured at room temperature under dark conditions. The barrier height was calculated as 1.05 eV. The values of mobility and conductivity was found to be 1.74 × 10^-9cm²/(V.s) and 5.5 × 10^-6Ω^-1·cm^-1, respectively. At low voltages the device showed ohmic conduction and the space charge limited current conduction mechanisms were dominated at higher voltages.

Key words: Schottky diode