| Citation: |
Yun Lijun, Wei Tongbo, Yan Jianchang, Liu Zhe, Wang Junxi, Li Jinmin. MOCVD epitaxy of InAlN on different templates[J]. Journal of Semiconductors, 2011, 32(9): 093001. doi: 10.1088/1674-4926/32/9/093001
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Yun L J, Wei T B, Yan J C, Liu Z, Wang J X, Li J M. MOCVD epitaxy of InAlN on different templates[J]. J. Semicond., 2011, 32(9): 093001. doi: 10.1088/1674-4926/32/9/093001.
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Abstract
InAlN epilayers were grown on high quality GaN and AlN templates with the same growth parameters. Measurement results showed that two samples had the same In content of ~16%, while the crystal quality and surface topography of the InAlN epilayer grown on the AlN template, with 282.3″ (002) full width at half maximum (FWHM) of rocking curve, 313.5″ (102) FWHM, surface roughness of 0.39 nm and V-pit density of 2.8 × 108 cm-2, were better than that of the InAlN epilayer grown on the GaN template, 309.3″, 339.1″, 0.593 nm and 4.2 × 108 cm-2. A primary conclusion was proposed that both the crystal quality and the surface topography of the InAlN epilayer grown on the AlN template were better than that of the InAlN epilayer grown on the GaN template. Therefore, the AlN template was a better choice than the GaN template for getting high quality InAlN epilayers.-
Keywords:
- InAlN,
- epilayer,
- template,
- crystal quality,
- surface topography
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References
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