| Citation: |
Wu Chunbo, Zhou Yuqin, Li Guorong, Liu Fengzhen. Influence of the initial transient state of plasma and hydrogen pre-treatment on the interface properties of a silicon heterojunction fabricated by PECVD[J]. Journal of Semiconductors, 2011, 32(9): 096001. doi: 10.1088/1674-4926/32/9/096001
****
Wu C B, Zhou Y Q, Li G R, Liu F Z. Influence of the initial transient state of plasma and hydrogen pre-treatment on the interface properties of a silicon heterojunction fabricated by PECVD[J]. J. Semicond., 2011, 32(9): 096001. doi: 10.1088/1674-4926/32/9/096001.
|
Influence of the initial transient state of plasma and hydrogen pre-treatment on the interface properties of a silicon heterojunction fabricated by PECVD
DOI: 10.1088/1674-4926/32/9/096001
-
Abstract
Amorphous/crystalline silicon heterojunctions (a-Si:H/c-Si SHJ) were prepared by plasma-enhanced chemical vapor deposition (PECVD). The influence of the initial transient state of the plasma and the hydrogen pre-treatment on the interfacial properties of the heterojunctions was studied. Experimental results indicate that: (1) The instability of plasma in the initial stage will damage the surface of c-Si. Using a shutter to shield the substrate for 100 s from the starting discharge can prevent the influence of the instable plasma process on the Si surface and also the interface between a-Si and c-Si. (2) The effect of hydrogen pre-treatment on interfacial passivation is constrained by the extent of hydrogen plasma bombardment and the optimal time for hydrogen pre-treatment is about 60 s. -
References
[1] [2] [3] [4] [5] [6] [7] [8] [9] [10] [11] [12] [13] [14] [15] [16] -
Proportional views
DownLoad: