High breakdown voltage InGaAs/InP double heterojunction bipolar transistors with fmax = 256 GHz and BVCEO = 8.3 V

Cheng Wei; Zhao Yan; Gao Hanchao; Chen Chen; Yang Naibin

doi:10.1088/1674-4926/33/1/014004

J. Semicond. > 2012, Volume 33 > Issue 1 > 014004

SEMICONDUCTOR DEVICES

High breakdown voltage InGaAs/InP double heterojunction bipolar transistors with f_max = 256 GHz and BV_CEO = 8.3 V

Cheng Wei, Zhao Yan, Gao Hanchao, Chen Chen and Yang Naibin

+ Author Affiliations

DOI: 10.1088/1674-4926/33/1/014004

Abstract: An InGaAs/InP DHBT with an InGaAsP composite collector is designed and fabricated using triple mesa structural and planarization technology. All processes are on 3-inch wafers. The DHBT with an emitter area of 1 × 15 μm² exhibits a current cutoff frequency f_t = 170 GHz and a maximum oscillation frequency f_max = 256 GHz. The breakdown voltage is 8.3 V, which is to our knowledge the highest BV_CEO ever reported for InGaAs/InP DHBTs in China with comparable high frequency performances. The high speed InGaAs/InP DHBTs with high breakdown voltage are promising for voltage-controlled oscillator and mixer applications at W band or even higher frequencies.

Key words: InP, double heterojunction bipolar transistor, planarization

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1	S-band low noise amplifier using 1 μm InGaAs/InAlAs/InP pHEMT Z. Hamaizia, N. Sengouga, M. C. E. Yagoub, M. Missous Journal of Semiconductors, 2012, 33(2): 025001. doi: 10.1088/1674-4926/33/2/025001
2	An 88 nm gate-length In_0.53Ga_0.47As/In_0.52Al_0.48As InP-based HEMT with f_max of 201 GHz Zhong Yinghui, Wang Xiantai, Su Yongbo, Cao Yuxiong, Jin Zhi, et al. Journal of Semiconductors, 2012, 33(7): 074004. doi: 10.1088/1674-4926/33/7/074004
3	An InP-based heterodimensional Schottky diode for terahertz detection Wen Ruming, Sun Hao, Teng Teng, Li Lingyun, Sun Xiaowei, et al. Journal of Semiconductors, 2012, 33(10): 104001. doi: 10.1088/1674-4926/33/10/104001
4	InP/InGaAs heterojunction bipolar transistors with different μ-bridge structures Yu Jinyong, Liu Xinyu, Xia Yang Journal of Semiconductors, 2009, 30(11): 114001. doi: 10.1088/1674-4926/30/11/114001
5	Ultra High-Speed InP/InGaAs SHBTs with ft of 210GHz Cheng Wei, Jin Zhi, Liu Xinyu, Yu Jinyong, Xu Anhuai, et al. Journal of Semiconductors, 2008, 29(3): 414-417.
6	A Submicron InGaAs/InP Heterojunction Bipolar Transistor with ft of 238GHz Jin Zhi, Cheng Wei, Liu Xinyu, Xu Anhuai, Qi Ming, et al. Journal of Semiconductors, 2008, 29(10): 1898-1901.
7	Ultrahigh-Speed Lattice-Matched In0.53Ga0.47As/In0.52Al0.48A HEMTs with 218GHz Cutoff Frequency Liu Liang, Zhang Haiying, Yin Junjian, Li Xiao, Xu Jingbo, et al. Chinese Journal of Semiconductors , 2007, 28(12): 1864-1867.
8	Effect of Deep Traps in Carrier Generation and Transport in Undoped InP Wafers Zhou Xiaolong, Sun Niefeng, Yang Ruixia, Zhang Weiyu, Sun Tongnian, et al. Chinese Journal of Semiconductors , 2007, 28(S1): 24-27.
9	Fabrication of a High-Performance RTD on InP Substrate Qi Haitao, Feng Zhen, Li Yali, Zhang Xiongwen, Shang Yaohui, et al. Chinese Journal of Semiconductors , 2007, 28(12): 1945-1948.
10	Agilent HBT Model Parameters Extraction Procedure For InP HBT’ He Jia, Sun Lingling, Liu Jun Chinese Journal of Semiconductors , 2007, 28(S1): 443-447.
11	A New Method for InGaAs/InP Composite ChannelHEMTs Simulation Liu Liang, Zhang Haiying, Yin Junjian, Li Xiao, Xu Jingbo, et al. Chinese Journal of Semiconductors , 2007, 28(11): 1706-1711.
12	Growth and characterization of InP-based and phosphorous-involved materials for applications to HBTs by GSMBE were studied systematically. High quality 50ram InP-based HBT and 100mm InGaP/GaAs HBT epitaxial materials were obtained through optimizing the HBT structure design and the GSMBE growth condition. It is shown that the HBT devices and circuits with high performance can be achieved by using the epi-wafers grown by the GSMBE technology developed in this work. Qi Ming, Xu Anhuai, Ai Likun, Sun Hao, Zhu Fuying, et al. Chinese Journal of Semiconductors , 2007, 28(S1): 182-185.
13	InP/InGaAs Heterojunction Bipolar Transistor with Base μ-Bridge and Emitter Air-Bridge Yu Jinyong, Liu Xinyu, Su Shubing, Wang Runmei, Xu Anhuai, et al. Chinese Journal of Semiconductors , 2007, 28(2): 154-158.
14	Growth Modes of InP Epilayers Grown by Solid Source Molecular Beam Epitaxy Pi Biao, Shu Yongchun, Lin Yaowang, Xu Bo, Yao Jianghong, et al. Chinese Journal of Semiconductors , 2007, 28(S1): 28-32.
15	Semi-Insulating Long InP Single Crystal Growth Sun Niefeng, Mao Luhong, Guo Weilian, Zhou Xiaolong, Yang Ruixia, et al. Chinese Journal of Semiconductors , 2007, 28(S1): 186-189.
16	Influence of Deep Level Defects on Electrical Properties and Defect Control in Semi-Insulating InP Zhao Youwen, Dong Zhiyuan, Li Chengji, Duan Manlong, Sun Wenrong, et al. Chinese Journal of Semiconductors , 2006, 27(3): 524-529.
17	Performance of an InP DHBT Grown by MBE Su Shubing, Liu Xinyu, Xu Anhuai, Yu Jinyong, Qi Ming, et al. Chinese Journal of Semiconductors , 2006, 27(5): 792-795.
18	Synthesis and Spectral Properties of InP Colloidal Quantum Dots Zhang Daoli, Zhang Jianbing, Wu Qiming, Yuan Lin, Chen Sheng, et al. Chinese Journal of Semiconductors , 2006, 27(7): 1213-1216.
19	A 162GHz Self-Aligned InP/InGaAs Heterojunction Bipolar Transistor Yu Jinyong, Yan Beiping, Su Shubing, Liu Xunchun, Wang Runmei, et al. Chinese Journal of Semiconductors , 2006, 27(10): 1732-1736.
20	Activation of Fe Doping and Electrical Compensation in Semi-Insulating InP Miao Shanshan, Zhao Youwen, Dong Zhiyuan, Deng Aihong, Yang Jun, et al. Chinese Journal of Semiconductors , 2006, 27(11): 1934-1939.

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Cheng Wei, Zhao Yan, Gao Hanchao, Chen Chen, Yang Naibin. High breakdown voltage InGaAs/InP double heterojunction bipolar transistors with f_max = 256 GHz and BV_CEO = 8.3 V[J]. Journal of Semiconductors, 2012, 33(1): 014004. doi: 10.1088/1674-4926/33/1/014004

Cheng W, Zhao Y, Gao H C, Chen C, Yang N B. High breakdown voltage InGaAs/InP double heterojunction bipolar transistors with fmax = 256 GHz and BVCEO = 8.3 V[J]. J. Semicond., 2012, 33(1): 014004. doi: 10.1088/1674-4926/33/1/014004.

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Received: 20 August 2015 Revised: 23 July 2011 Online: Published: 01 January 2012

An InGaAs/InP DHBT with an InGaAsP composite collector is designed and fabricated using triple mesa structural and planarization technology. All processes are on 3-inch wafers. The DHBT with an emitter area of 1 × 15 μm² exhibits a current cutoff frequency f_t = 170 GHz and a maximum oscillation frequency f_max = 256 GHz. The breakdown voltage is 8.3 V, which is to our knowledge the highest BV_CEO ever reported for InGaAs/InP DHBTs in China with comparable high frequency performances. The high speed InGaAs/InP DHBTs with high breakdown voltage are promising for voltage-controlled oscillator and mixer applications at W band or even higher frequencies.

High breakdown voltage InGaAs/InP double heterojunction bipolar transistors with f_max = 256 GHz and BV_CEO = 8.3 V

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High breakdown voltage InGaAs/InP double heterojunction bipolar transistors with f_max = 256 GHz and BV_CEO = 8.3 V

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High breakdown voltage InGaAs/InP double heterojunction bipolar transistors with fmax = 256 GHz and BVCEO = 8.3 V

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High breakdown voltage InGaAs/InP double heterojunction bipolar transistors with f_max = 256 GHz and BV_CEO = 8.3 V

High breakdown voltage InGaAs/InP double heterojunction bipolar transistors with f_max = 256 GHz and BV_CEO = 8.3 V