| Citation: |
Zhang Guangchen, Feng Shiwei, Li Jingwan, Zhao Yan, Guo Chunsheng. Determination of channel temperature for AlGaN/GaN HEMTs by high spectral resolution micro-Raman spectroscopy[J]. Journal of Semiconductors, 2012, 33(4): 044003. doi: 10.1088/1674-4926/33/4/044003
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Zhang G C, Feng S W, Li J W, Zhao Y, Guo C S. Determination of channel temperature for AlGaN/GaN HEMTs by high spectral resolution micro-Raman spectroscopy[J]. J. Semicond., 2012, 33(4): 044003. doi: 10.1088/1674-4926/33/4/044003.
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Determination of channel temperature for AlGaN/GaN HEMTs by high spectral resolution micro-Raman spectroscopy
DOI: 10.1088/1674-4926/33/4/044003
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Abstract
Channel temperature determinations of AlGaN/GaN high electron mobility transistors (HEMTs) by high spectral resolution micro-Raman spectroscopy are proposed. The temperature dependence of the E2 phonon frequency of GaN material is calibrated by using a JYT-64000 micro-Raman system. By using the Lorentz fitting method, the measurement uncertainty for the Raman phonon frequency of ±0.035 cm-1 is achieved, corresponding to a temperature accuracy of ±3.2℃ for GaN material, which is the highest temperature resolution in the published works. The thermal resistance of the tested AlGaN/GaN HEMT sample is 22.8℃/W, which is in reasonably good agreement with a three dimensional heat conduction simulation. The difference among the channel temperatures obtained by micro-Raman spectroscopy, the pulsed electrical method and the infrared image method are also investigated quantificationally.-
Keywords:
- HEMT
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References
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