SEMICONDUCTOR DEVICES
Abstract: A 700 V BCD technology platform is presented for high voltage applications. An important feature is that all the devices have been realized by using a fully implanted technology in a p-type single crystal without an epitaxial or a buried layer. An economical manufacturing process, requiring only 10 masking steps, yields a broad range of MOS and bipolar components integrated on a common substrate, including 700 V nLDMOS, 200 V nLDMOS, 80 V nLDMOS, 60 V nLDMOS, 40 V nLDMOS, 700 V nJFET, and low voltage devices. A robust double RESURF nLDMOS with a breakdown voltage of 800 V and specific on-resistance of 206.2 mΩ·cm2 is successfully optimized and realized. The results of this technology are low fabrication cost, simple process and small chip area for PIC products.
Key words: BCD technology, fully implanted technology, double RESURF, LDMOS
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Received: 20 August 2015 Revised: 19 October 2011 Online: Published: 01 April 2012
| Citation: |
Qiao Ming, Jiang Lingli, Zhang Bo, Li Zhaoji. A 700 V BCD technology platform for high voltage applications[J]. Journal of Semiconductors, 2012, 33(4): 044004. doi: 10.1088/1674-4926/33/4/044004
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Qiao M, Jiang L L, Zhang B, Li Z J. A 700 V BCD technology platform for high voltage applications[J]. J. Semicond., 2012, 33(4): 044004. doi: 10.1088/1674-4926/33/4/044004.
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