Theoretical analysis and concept demonstration of a novel MOEMS accelerometer based on Raman-Nath diffraction

Zhang Zuwei; Wen Zhiyu; Hu Jing

doi:10.1088/1674-4926/33/4/044005

J. Semicond. > 2012, Volume 33 > Issue 4 > 044005

SEMICONDUCTOR DEVICES

Theoretical analysis and concept demonstration of a novel MOEMS accelerometer based on Raman-Nath diffraction

Zhang Zuwei, Wen Zhiyu and Hu Jing

+ Author Affiliations

DOI: 10.1088/1674-4926/33/4/044005

Abstract: The design and simulation of a novel microoptoelectromechanical system (MOEMS) accelerometer based on Raman-Nath diffraction are presented. The device is planned to be fabricated by microelectromechanical system technology and has a different sensing principle than the other reported MOEMS accelerometers. The fundamental theories and principles of the device are discussed in detail, a 3D finite element simulation of the flexural plate wave delay line oscillator is provided, and the operation frequency around 40 MHz is calculated. Finally, a lecture experiment is performed to demonstrate the feasibility of the device. This novel accelerometer is proposed to have the advantages of high sensitivity and anti-radiation, and has great potential for various applications.

Key words: accelerometer

[1]
[2]
[3]
[4]
[5]
[6]
[7]
[8]
[9]
[10]
[11]
[12]
[13]
[14]
[15]
[16]
[17]
[18]
[19]
[20]
[21]
[22]
[23]
[24]

1	A 130-nm ferroelectric nonvolatile system-on-chip for internet of things Zhiyi Yu Journal of Semiconductors, 2019, 40(2): 020205. doi: 10.1088/1674-4926/40/2/020205
2	Hot electron effects on the operation of potential well barrier diodes M. Akura, G. Dunn, M. Missous Journal of Semiconductors, 2019, 40(12): 122101. doi: 10.1088/1674-4926/40/12/122101
3	Interfacial engineering of printable bottom back metal electrodes for full-solution processed flexible organic solar cells Hongyu Zhen, Kan Li, Yaokang Zhang, Lina Chen, Liyong Niu, et al. Journal of Semiconductors, 2018, 39(1): 014002. doi: 10.1088/1674-4926/39/1/014002
4	Dual material gate doping-less tunnel FET with hetero gate dielectric for enhancement of analog/RF performance Sunny Anand, R.K. Sarin Journal of Semiconductors, 2017, 38(2): 024001. doi: 10.1088/1674-4926/38/2/024001
5	Large area perovskite solar cell module Longhua Cai, Lusheng Liang, Jifeng Wu, Bin Ding, Lili Gao, et al. Journal of Semiconductors, 2017, 38(1): 014006. doi: 10.1088/1674-4926/38/1/014006
6	Accelerating the life of transistors Haochun Qi, Changzhi Lü, Xiaoling Zhang, Xuesong Xie Journal of Semiconductors, 2013, 34(6): 064010. doi: 10.1088/1674-4926/34/6/064010
7	An integrated MEMS piezoresistive tri-axis accelerometer Yongping Zhang, Changde He, Jiaqi Yu, Chunhui Du, Juanting Zhang, et al. Journal of Semiconductors, 2013, 34(10): 104009. doi: 10.1088/1674-4926/34/10/104009
8	Development of a novel accelerometer based on an overlay detection bridge Chunhui Du, Changde He, Xiaoyang Ge, Yongping Zhang, Jiaqi Yu, et al. Journal of Semiconductors, 2013, 34(2): 024006. doi: 10.1088/1674-4926/34/2/024006
9	Fabrication and characterization of a low frequency electromagnetic energy harvester Abu Riduan Md. Foisal, Gwiy-Sang Chung Journal of Semiconductors, 2012, 33(7): 074001. doi: 10.1088/1674-4926/33/7/074001
10	Design and process test of a novel MOEMS accelerometer based on Raman-Nath diffraction Zhang Zuwei, Wen Zhiyu, Shang Zhengguo, Li Dongling, Hu Jing, et al. Journal of Semiconductors, 2012, 33(9): 094009. doi: 10.1088/1674-4926/33/9/094009
11	Photoelectric conversion characteristics of ZnO/SiC/Si heterojunctions Wu Xiaopeng, Chen Xiaoqing, Sun Lijie, Mao Shun, Fu Zhuxi, et al. Journal of Semiconductors, 2010, 31(10): 103002. doi: 10.1088/1674-4926/31/10/103002
12	Design and noise analysis of a sigma–delta capacitive micromachined accelerometer Liu Yuntao, Liu Xiaowei, Chen Weiping, Wu Qun Journal of Semiconductors, 2010, 31(5): 055006. doi: 10.1088/1674-4926/31/5/055006
13	Wafer level hermetic packaging based on Cu–Sn isothermal solidification technology Cao Yuhan, Luo Le Journal of Semiconductors, 2009, 30(8): 086001. doi: 10.1088/1674-4926/30/8/086001
14	Design and Fabrication of an Accelerometer with Novel "8-Beams/Mass" Structure Wang Yucai, Jiao Jiwei, Duan Fei, Zhang Ying, Mi Binwei, et al. Chinese Journal of Semiconductors , 2007, 28(5): 783-788.
15	Synthesis and Characterization of SiCOF/a-C∶F Double-Layer Films with Low Dielectric Constant for Copper Interconnects Zhang Wei, Zhu Lian, Sun Qingqing, Lu Hongliang, Ding Shijin, et al. Chinese Journal of Semiconductors , 2006, 27(3): 429-433.
16	A 2.4GHz Low Power ASK Transmitter for Wireless Capsule Endoscope Applications Han Shuguang, Chi Baoyong, Wang Zhihua Chinese Journal of Semiconductors , 2006, 27(6): 988-993.
17	30Gbit/s Parallel Optical Receiver Module Chen Hongda, Jia Jiuchun, Pei Weihua, Tang Jun Chinese Journal of Semiconductors , 2006, 27(4): 696-699.
18	Effect of Relaxation Time on Electron Transport Properties in Double-Barrier Structures Dai Zhenhong, Ni Jun Chinese Journal of Semiconductors , 2006, 27(4): 604-608.
19	A Wavelength Tunable DBR Laser Integrated with an Electro-Absorption Modulator by a Combined Method of SAG and QWI Zhang Jing, Li Baoxia, Zhao Lingjuan, Wang Baojun, Zhou Fan, et al. Chinese Journal of Semiconductors , 2005, 26(11): 2053-2057.
20	Bulk-Silicon Resonant Accelerometer Jia Yubin, Hao Yilong，and Zhang Rong Chinese Journal of Semiconductors , 2005, 26(2): 281-286.

Search

GET CITATION

shu

Export: BibTex EndNote

Article Metrics

Article views: 3629 Times PDF downloads: 1724 Times Cited by: 0 Times

History

Received: 20 August 2015 Revised: 12 December 2011 Online: Published: 01 April 2012

The design and simulation of a novel microoptoelectromechanical system (MOEMS) accelerometer based on Raman-Nath diffraction are presented. The device is planned to be fabricated by microelectromechanical system technology and has a different sensing principle than the other reported MOEMS accelerometers. The fundamental theories and principles of the device are discussed in detail, a 3D finite element simulation of the flexural plate wave delay line oscillator is provided, and the operation frequency around 40 MHz is calculated. Finally, a lecture experiment is performed to demonstrate the feasibility of the device. This novel accelerometer is proposed to have the advantages of high sensitivity and anti-radiation, and has great potential for various applications.

Theoretical analysis and concept demonstration of a novel MOEMS accelerometer based on Raman-Nath diffraction

Search

GET CITATION

Share:

Article Metrics

History

Catalog

Email This Article

Theoretical analysis and concept demonstration of a novel MOEMS accelerometer based on Raman-Nath diffraction

DOI: 10.1088/1674-4926/33/4/044005

Abstract

References

Proportional views

Catalog

Theoretical analysis and concept demonstration of a novel MOEMS accelerometer based on Raman-Nath diffraction

Search

GET CITATION

Share:

Article Metrics

History

Catalog

Email This Article

Theoretical analysis and concept demonstration of a novel MOEMS accelerometer based on Raman-Nath diffraction

DOI: 10.1088/1674-4926/33/4/044005

Abstract

References

Proportional views

Catalog

Export File

Citation

Format

Content