| Citation: |
Gh. Sareminia, H. Simchi, A. Ostovari, L. Lavasanpour. Simultaneous quality improvement of the roughness and refractive index of SiC thin films[J]. Journal of Semiconductors, 2012, 33(6): 063001. doi: 10.1088/1674-4926/33/6/063001
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G Sareminia, H Simchi, A Ostovari, L Lavasanpour. Simultaneous quality improvement of the roughness and refractive index of SiC thin films[J]. J. Semicond., 2012, 33(6): 063001. doi: 10.1088/1674-4926/33/6/063001.
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Simultaneous quality improvement of the roughness and refractive index of SiC thin films
DOI: 10.1088/1674-4926/33/6/063001
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Abstract
We deposited silicon carbide thin layers on cleaned Si (100) substrates using the plasma enhanced chemical vapor deposition method, and show that the RFTIR spectrum is periodic in the near and medium infrared ranges. It is shown that both the deposition rate and the uniformity of the thin films are decreased by increasing the substrate temperature, and that the refractive index is increased by increasing the substrate temperature. This shows that there is a trade-off between the quality improvement of the uniformity and refractive index.-
Keywords:
- SiC,
- PECVD,
- RFTIR,
- thickness measurement,
- refractive index
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References
[1] [2] [3] [4] [5] [6] [7] [8] [9] [10] [11] [12] [13] -
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