J. Semicond. > 2012, Volume 33 > Issue 6 > 063002
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SEMICONDUCTOR MATERIALS

Tungsten oxide nanostructures: controllable growth and field emission

Yue Shuanglin, Xu Tingting, Li Wei, Yan Ji and Yi He

+ Author Affiliations
DOI: 10.1088/1674-4926/33/6/063002

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Abstract: Non-fully oxidized tungsten oxide (WO3-x) nanostructures with controllable morphology were fabricated by adjusting the gas pressure in chemical vapor deposition. The comparative field emission (FE) measurements showed that the obtained W18O49 nanowires have excellent FE property. The turn-on field was 7.1 V/μ m for 10 μA/cm2 and the observed highest current density was 4.05 mA/cm2 at a field of 17.2 V/μm. Good electron emission reproducibility was also observed during thermal evaporation and desorption testing.

Key words: non-fully oxidized tungsten oxides

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    Qiao Ming, Jiang Lingli, Zhang Bo, Li Zhaoji. A 700 V BCD technology platform for high voltage applications[J]. Journal of Semiconductors, 2012, 33(4): 044004. doi: 10.1088/1674-4926/33/4/044004
    Qiao M, Jiang L L, Zhang B, Li Z J. A 700 V BCD technology platform for high voltage applications[J]. J. Semicond., 2012, 33(4): 044004. doi: 10.1088/1674-4926/33/4/044004.
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    Received: 20 August 2015 Revised: 12 January 2012 Online: Published: 01 June 2012

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      Article Navigation >  Journal of Semiconductors  > 2012  >  33(6): 063002
      Qiao Ming, Jiang Lingli, Zhang Bo, Li Zhaoji. A 700 V BCD technology platform for high voltage applications[J]. Journal of Semiconductors, 2012, 33(4): 044004. doi: 10.1088/1674-4926/33/4/044004 ****Qiao M, Jiang L L, Zhang B, Li Z J. A 700 V BCD technology platform for high voltage applications[J]. J. Semicond., 2012, 33(4): 044004. doi: 10.1088/1674-4926/33/4/044004.
      Citation:
      Yue Shuanglin, Xu Tingting, Li Wei, Yan Ji, Yi He. Tungsten oxide nanostructures: controllable growth and field emission[J]. Journal of Semiconductors, 2012, 33(6): 063002. doi: 10.1088/1674-4926/33/6/063002 ****
      Yue S L, Xu T T, Li W, Yan J, Yi H. Tungsten oxide nanostructures: controllable growth and field emission[J]. J. Semicond., 2012, 33(6): 063002. doi: 10.1088/1674-4926/33/6/063002.
      shu

      Tungsten oxide nanostructures: controllable growth and field emission

      DOI: 10.1088/1674-4926/33/6/063002

      • Key Laboratory for Physics and Chemistry of Nanodevices, Department of Electronics, Peking University, Beijing 100871, China

      • Key Laboratory for Physics and Chemistry of Nanodevices, Department of Electronics, Peking University, Beijing 100871, China

      • Key Laboratory for Physics and Chemistry of Nanodevices, Department of Electronics, Peking University, Beijing 100871, China

      • Key Laboratory for Physics and Chemistry of Nanodevices, Department of Electronics, Peking University, Beijing 100871, China

      • Key Laboratory for Physics and Chemistry of Nanodevices, Department of Electronics, Peking University, Beijing 100871, China

      Funds:

      The National Natural Science Foundation of China (General Program, Key Program, Major Research Plan)

      • Received Date: 2015-08-20
      • Accepted Date: 2011-12-02
      • Revised Date: 2012-01-12
      • Published Date: 2012-05-22

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