| Citation: |
Tang Zhaohuan, Tan Kaizhou, Cui Wei, Zhang Jing, Zhong Yi, Xu Shiliu, Hao Yue, Zhang Heming, Hu Huiyong, Zhang Zhengfan, Hu Gangyi. A 150% enhancement of PMOSFET mobility using hybrid orientation[J]. Journal of Semiconductors, 2012, 33(6): 064002. doi: 10.1088/1674-4926/33/6/064002
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Tang Z H, Tan K Z, Cui W, Zhang J, Zhong Y, Xu S L, Hao Y, Zhang H M, Hu H Y, Zhang Z F, Hu G Y. A 150% enhancement of PMOSFET mobility using hybrid orientation[J]. J. Semicond., 2012, 33(6): 064002. doi: 10.1088/1674-4926/33/6/064002.
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Abstract
A high-performance PMOSFET based on silicon material of hybrid orientation is obtained. Hybrid orientation wafers, integrated by (100) and (110) crystal orientation, are fabricated using silicon-silicon bonding, chemical mechanical polishing, etching silicon and non-selective expitaxy. A PMOSFET with W/L = 50 μm/8 μm is also processed, and the measured results show that the drain-source current and peak mobility of the PMOSFET are enhanced by up to 50.7% and 150% at Vgs = -15 V and Vds = -0.5 V, respectively. The mobility values are higher than that reported in the literature. -
References
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